PTF10120 ERICSSON | Alldatasheet

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e RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.2 A Total, f = 1.99 GHz) Gps 10 11 — dB Power Output at 1 dB Compression DD = 28 V, IDQ = 1.2 A Total, f = 1.99 GHz) P-1dB 120 — — Watts Drain Efficiency DD = 28 V, POUT = 120 W, IDQ = 1.2 A Total, f = 1.99 GHz)hD —4 0 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 1.2 A Total, f = 1.99 GHz Y — — 10:1 — —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS ™ Field Effect Transistor Package 20250 120 150 0 3 6 9 12 15 18 Input Power (Watts) 100 VDD = 28 V IDQ = 1.2 A Total f = 1990 MHz Typical Output Power vs. Input Power Output Power Efficiency Output Power (Watts) Efficiency (%)

Description

The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED

  • Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ
  • Full Gold Metallization
  • Silicon Nitride Passivated
  • Back Side Common Source
  • Excellent Thermal Stability
  • 100% Lot Traceability 10120A-1234569849

e Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side) Characteristic (per side) Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA V (BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V I DSS — — 5.0 mA Gate Threshold Voltage V DS = 10 V, ID = 150 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 2 A g fs — 4.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage(1) VDSS 65 Vdc Gate-Source Voltage(1) VGS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation at P D 440 Watts Above 25°C derate by 2.51 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C) R qJC 0.39 °C/W (1) per side Typical Performance 1750 1850 1950 2050 Frequency (MHz) Gain (dB) 100 120 140 160 Output Power & Efficiency VDD = 28 V IDQ = 1.2 A Total Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Efficiency (%) Gain (dB) Broadband Test Fixture Performance 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) Gain (dB) Gain (dB) Return Loss (dB) Efficiency (%) @P-1dB EfficiencyReturn Loss 0 - 5 -10 -15 -20 VDD = 28 V IDQ = 1.2 A Total POUT = 120 W

e Power Gain vs. Output Power 1 10 100 1000 Output Power (Watts) Power Gain (dB) VDD = 28 V f = 1990 MHz IDQ = 1200 mA IDQ = 600 mA IDQ = 300 mA -65 -55 -45 -35 -25 -15 0 20 40 60 80 100 120 140 Output Power (Watts-PEP) IMD (dBc) VDD = 28 V IDQ = 1.2 A Total f1 = 1959 MHz f2 = 1960 MHz Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) IM3 IM7 IM5 Impedance Data (VDD = 28 V, POUT = 120 W, IDQ = 1.2 A Total) Output Power vs. Supply Voltage 100 120 140 160 180 22 24 26 28 30 32 34 Supply Voltage (Volts) Output Power (Watts) IDQ = 1.2 A Total f = 1990 MHz 120 160 200 240 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss C gs C ds C rss VGS =0 V f = 1 MHz Capacitance vs. Supply Voltage (per side) * * This part is internally matched. Measurements of the finished product will not yield these results. Frequency Z Source W Z Load W GHz R jX R jX Z Source Z Load G D G S D Z0 = 50 W

e Test Circuit Test Circuit Block Diagram for f = 2.0 GHz Q1 PTF 10120 LDMOS RF Transistor l1, l2 Microstrip 50 W l3, l4 .048 l @ 2.0 GHz Microstrip 31.7 W l5, l6 .18 l @ 2.0 GHz Microstrip 70 W l7, l8 .097 l @ 2.0 GHz Microstrip 9.35 W l9, l10 .129 l @ 2 GHz Microstrip 7.6 W l11, l12 .031 l @ 2 GHz Microstrip 8.8 W l13, l14 .25 l @ 2 GHz Microstrip 65 W C1, C2, C3, C4, C5, C6, C11, C12 10 pF Chip Cap ATC 100 B C7, C8, C15, C16 0.1 mF Chip Cap K1206 C9, C10, C13, C14 10 mF SMT Tantalum Cap C17 0.7 pF Chip Cap ATC 100 B L1, L2 2.7 nh SMT Coil L3, L4 4 mm SMT Ferrite Bead R1, R2, R3, R4 220 W Chip Resistor K1206 R5, R6 2K SMT Potentiometer R7, R8 10 W Chip Resistor K1206 R9, R10 1 W Chip Resistor K1206 T1, T2 50 W Coaxial Balun Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper

e Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 1998 Ericsson Inc. EUS/KR 1301-PTF 10120 Uen Rev. A 01-06-99 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com\\rfpower

e Notes: