PTF10112 ERICSSON | Alldatasheet

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e PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS ™ Field Effect Transistor Package 20248 0123456 Input Power (Watts) Output Power (Watts) VCC = 28 V IDQ = 580 mA f = 2000 MHz Typical Output Power vs. Input Power

Description

The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED

  • Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min - Power Gain = 12 dB Typ
  • Full Gold Metallization
  • Silicon Nitride Passivated
  • Back Side Common Source
  • Excellent Thermal Stability
  • 100% Lot Traceability RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz) Gps 11 12 — dB Power Output at 1 dB Compression DD = 28 V, IDQ = 580 mA, f = 1.99 GHz) P-1dB 60 — — Watts Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz) hD —4 1 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz Y — — 10:1 — —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. 10112A-1234569837

e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA V (BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V I DSS — — 5.0 mA Gate Threshold Voltage V DS = 10 V, ID = 150 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 2 A g fs — 4.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation at P D 237 Watts Above 25°C derate by 1.35 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C) R qJC 0.74 °C/W Typical Performance 1750 1850 1950 2050 Frequency (MHz) Gain (dB) Output Power & Efficiency VCC = 28 V IDQ = 580 mA Output Power (W) Efficiency (%) Gain (dB) Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Broadband Test Fixture Performance 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) Gain (dB) VDD = 28 V IDQ = 580mA POUT = 20 W Gain (dB) Return Loss (dB) Efficiency (%) @P-1dB Efficiency (%)Return Loss (dB) 0 -10 -20 -30

e Output Power vs. Supply Voltage 22 24 26 28 30 32 34 Supply Voltage (Volts) Output Power (Watts) IDQ = 580 mA f = 2000 MHz -65 -55 -45 -35 -25 -15 0 1 02 03 04 05 06 07 0 Output Power (Watts-PEP) IMD (dBc) VDD = 28 V IDQ = 580 mA f1 = 1959 MHz f2 = 1960 MHz Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) IM3 IM7 IM5 Power Gain vs. Output Power 0.1 1.0 10.0 100.0 Output Power (Watts) Power Gain (dB) VDD = 28 V f = 2000 MHz IDQ = 580 mA IDQ = 290 mA IDQ = 145 mA Capacitance vs. Supply Voltage * 120 160 200 240 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss C gs C ds C rss VGS = 0 V f = 1 MHz * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Tem p. (°C) Bias Voltage (V) 0.400 1.383 2.367 3.350 4.333 5.317 Voltage normalized to 1.0 V Series show current (A)

e Frequency Z Source W Z Load W GHz R jX R jX Impedance Data VDD = 28 V, POUT = 60 W, IDQ = 580 mA Z Source Z Load G S D Z0 = 50 W

e Test Circuit Test Circuit Block Diagram for f = 1.93–1.99 GHz Q1 PTF 10112 LDMOS RF Transistor l1, l6 Microstrip 50 W l2 .10 l @ 2.0 GHz Microstrip 9.4 W l3 .08 l @ 2.0 GHz Microstrip 70 W l4 .162 l @ 2.0 GHz Microstrip 5.8 W l5 .22 l @ 2 GHz Microstrip 65 W C1, C2, C5, C8 10 pF Chip Cap ATC 100 B C3, C7 0.1 mF Chip Cap C4, C6 10 mF SMT Tantalum Parts Layout (not to scale) Artwork (1 inch ) L1 2.7 nh SMT Coil L2 4mm SMT Ferrite Bead R1, R2 220 W Chip Resistor K1206 R3 2K SMT Potentiometer R4 10 W Chip Resistor K1206 R5 1 W Chip Resistor K1206 Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e 10112 Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 1998 Ericsson Inc. EUS/KR 1301-PTF 10112 Uen Rev. A 01-08-2000 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower

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