PTF10020 ERICSSON | Alldatasheet

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e RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Gps 11.0 12.5 — dB Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.4 A Total, f = 960 MHz) P-1dB 125 130 — Watts Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) h 50 55 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W(PEP), IDQ = 1.4 A Total, Y — — 10:1 — f = 959.9, 960 MHz—all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. PTF 10020

125 Watts, 860–960 MHz

GOLDMOS ™ Field Effect Transistor 100 125 150 01234567 Input Power (Watts) Output Power (Watts) VDD = 28 V IDQ = 1.4 A Total Typical Output Power vs. Input Power

900 MHz

960 MHz

860 MHz

  • INTERNALLY MATCHED
  • Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ
  • Full Gold Metallization
  • Silicon Nitride Passivated
  • Back Side Common Source
  • 100% Lot Traceability

Description

The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 10020 A-1234569813

e Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA V (BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V I DSS — — 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 4.3 5.0 Volts Forward Transconductance V DS = 10 V, ID = 3 A g fs — 2.5 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation at P D 290 Watts Above 25°C derate by 1.67 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (TCASE = 70°C) R qJC 0.6 °C/W (1)per side Typical Performance Broadband Test Fixture Performance 925 930 935 940 945 950 955 960 Frequency (MHz) Gain (dB) VDD = 28 V IDQ = 1.4 A Total POUT = 125 W Gain Return Loss Efficiency % Return Loss (dB)- 5 -15 -25 -35 Efficiency Broadband Test Fixture Performance 860 870 880 890 900 Frequency (MHz) Gain (dB) VDD = 28 V IDQ = 1.4 A Total POUT = 125 W Gain Return Loss Efficiency % Return Loss (dB)- 5 -15 -25 -35 Efficiency

e Typical Performance Efficiency vs. Output Power 30 50 70 90 110 130 Output Power (Watts) Efficiency (%) VDD = 28 V IDQ = 1.4 A Total f = 960 MHz -60 -50 -40 -30 -20 -10 20 30 40 50 60 70 80 90 100 110 120 Output Power (Watts-PEP) IMD (dBc) VDD = 28 V IDQ = 1.4 A Total f1 = 941.9 MHz f2 = 942.0 MHz 3rd order 5th 7th Intermodulation Distortion vs. Output PowerOutput Power vs. Supply Voltage 110 130 150 20 22 24 26 28 30 32 34 VDS , Supply Voltage Output Power (Watts) IDQ = 1.4 A Total f = 960 MHz Pin = 5.4 W Power Gain vs. Output Power 1 10 100 1000 Output Power (W) Gain (dB) IDQ = 1.4 A IDQ = 700 mA IDQ = 350 mA VDD = 28 V f = 960 MHz Capacitance vs. Voltage (one side)* 100 120 140 160 180 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss (pF) C gs C ds C rss VGS = 0 V f = 1 MHz *This part is internally matched. Measurements of the finished product will not yield these figures. 860 880 900 920 940 960 Frequency (MHz) Gain 110 130 150 VDD = 28 V IDQ = 1.4 A Total Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Efficiency (%) G ain (dB) Output Power & Efficiency

e Frequency Z Source W Z Load W MHz R jX R jX Z Source Z Load G D G S D Impedance Data (VDD = 28 V, IDQ = 1.4 A, POUT = 125 W) Z0 = 50 W Bias Voltage vs. Temperature 0.94 0.96 0.98 1.00 1.02 1.04 -20 30 80 130 Tem p. (°C) Bias Voltage (V) 0.40 1.32 2.25 3.17 4.09 5.02 Voltage normalized to 1.0 V Series show current (A) Typical Performance

e Typical Scattering Parameters (one side only) (VDS = 28 V, ID = 4 A) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang Test Circuit l1, l20 50 W, .030 l l2, l19 20 W, .080 l l3, l18 32 W, .191 l l4, l17 25 W, .500 l l5, l6 25 W, .091 l l7, l10 7 W, .056 l l8, l9 13.0 W, .017 l l11, l12 13.0 W, .017 l l13, l14 7.0 W, .093 l l15, l16 10.2 W, .030 l Circuit Board .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Schematic for f = 960 MHz DUT PTF 10020 C1-2 15 pF, Capacitor ATC 100 B C3 0.35–3.5 pF, Variable Capacitor C4 7.5 pF, Capacitor ATC 100 A C5 1–9 pF, Variable Capacitor C6-7, C10, C13-14, C18 33 pF, Capacitor ATC 100 B C8, C11 10 mF, +10 V Electrolytic Capacitor C9, C12, C15, C19 0.01 mF, Capacitor ATC 100 B C16, C17, C20, C21 10 mF, +30 V Electrolytic Capacitor L1. L2 4 T urn, #20 AWG, .120” I.D. R1, R2, R4, R5 1.0 K, W Resistor R3, R6 5.1 K, 1/4 W Resistor

e Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Specifications subject to change without notice. © 1998 Ericsson Inc. EUS/KR 1301-PTF 10020 Uen Rev. A 01-15-00 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Components Layout (not to scale)