PTF10007

PTF10007 ERICSSON | Alldatasheet

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/G101 PTF 10007 35 Watts, 1.0 GHz GOLDMOS ® Field Effect Transistor 0123 Input Power (Watts) Output Power 100 Efficiency VDD = 28 V IDQ = 300 mA f = 960 MHz Typical Output Power & Efficiency vs. Input Power Output Pow er (W) E ffi ci ency (%) Package 20222

Description

The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.

• Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ  Full Gold Metallization  Silicon Nitride Passivated  Back Side Common Source  100% lot traceability  Available in Package 20235 as PTF 10052 Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 60 Vdc Gate-Source Voltage V GS ±20 Vdc Operating Junction Temperature T J 200 °C Total Device Dissipation at Tflange = 25°C P D 120 Watts Above 25°C derate by 0.7 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R /G113JC 1.4 °C/W Package 20235 10007A-1234569723 10052 A-1234569999

Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA V (BR)DSS 65 70 — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V I DSS —— 1.0 mA Gate Threshold Voltage V DS = 10 V, ID = 75 mA V GS(th) 3.0 — 5.0 Volts Forward Transconductance V DS = 10 V, ID = 3 A g fs — 2.8 — Siemens RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) G ps 12.0 13.5 — dB Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) P-1dB 35 —— Watts Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) /G104 50 55 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz— /G89 —— 10:1 — all phase angles at frequency of test) Typical Performance 400 500 600 700 800 900 1000 Fre que ncy (MHz) Gain Output Power & Efficiency VDD = 28 V IDQ = 300 mA POUT , Gain & Efficiency (at P-1dB) vs. Frequency E fficiency (%) Output P ow er (W) G ain (dB) Broadband Test Fixture Performance 925 930 935 940 945 950 955 960 Fr e que nc y (MHz) Gain VDD = 28 V IDQ = 300 mA POUT = 35 W Gain (dB) Return Loss (dB) E fficiency (%) EfficiencyReturn Loss - 5 -15 -25 -35

Power Gain vs. Output Power 0.1 1.0 10.0 100.0 Output Power (Watts) Power Gain (dB) VDD = 28 V f = 960 MHz IDQ = 150 mA IDQ = 300 mA IDQ = 75 mA Intermodulation Distortion vs. Output Power -60 -50 -40 -30 -20 -10 0 1 02 03 04 05 0 Output Power (Watts-PEP) IMD (dBc) 3rd 7th 5th VDD = 28 V IDQ = 300 mA f1 = 960.000 MHz f2 = 960.100 MHz Output Power vs. Supply Voltage 22 24 26 28 30 32 34 Supply Voltage (Volts) Output Power (Watts) IDQ = 300 mA POUT = 5 W f = 960 MHz Capacitance vs. Supply Voltage 100 120 0 1 02 03 04 0 Supply Voltage (Volts) Cds and Cgs (pF) Crss (pF) Cgs Cds Crss VGS =0 V f = 1 MHz Bias Voltage vs . Temperature 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Temp. (°C) Bias Voltage (V) 0.3 0.87 1.44 2.01 2.58 3.15 Voltage normalized to 1.0 V Series show current (A)

Typical Scattering Parameters (VDS = 28 V, ID = 2.0 A) f S11 S21 S12 S22 (MHz) Mag Ang Mag Ang Mag Ang Mag Ang 400 0.948 -167 3.668 33 0.006 -37 0.858 -149 420 0.951 -168 3.403 32 0.005 -37 0.866 -150 440 0.955 -168 3.161 30 0.005 -37 0.877 -151 460 0.956 -168 2.943 29 0.005 -36 0.886 -152 480 0.957 -168 2.745 28 0.004 -38 0.892 -152 500 0.959 -168 2.575 27 0.004 -35 0.898 -153 520 0.960 -169 2.421 26 0.004 -34 0.903 -153 540 0.962 -169 2.282 25 0.004 -30 0.907 -154 560 0.963 -169 2.151 24 0.003 -29 0.911 -155 580 0.964 -169 2.024 22 0.003 -28 0.913 -155 600 0.964 -169 1.907 22 0.003 -23 0.919 -156 620 0.965 -169 1.806 21 0.002 -20 0.925 -156 640 0.967 -169 1.72 21 0.002 -13 0.929 -156 660 0.966 -170 1.636 20 0.002 -6 0.929 -157 680 0.967 -170 1.558 19 0.002 3 0.929 -157 700 0.967 -170 1.483 18 0.002 8 0.928 -157 720 0.968 -170 1.413 18 0.002 21 0.930 -158 740 0.968 -170 1.345 17 0.002 25 0.932 -158 760 0.967 -170 1.281 17 0.002 33 0.935 -159 780 0.966 -170 1.228 17 0.002 44 0.937 -159 800 0.967 -170 1.179 16 0.002 51 0.938 -159 820 0.968 -170 1.134 16 0.002 55 0.939 -159 840 0.967 -170 1.088 15 0.002 59 0.938 -160 860 0.967 -170 1.039 15 0.003 67 0.938 -160 880 0.967 -170 0.993 14 0.003 68 0.938 -160 900 0.966 -170 0.957 14 0.003 73 0.941 -161 920 0.966 -171 0.922 14 0.003 75 0.943 -161 940 0.966 -171 0.890 14 0.003 79 0.941 -161 960 0.966 -171 0.859 13 0.004 81 0.942 -161 980 0.966 -171 0.827 13 0.004 83 0.943 -161 1000 0.965 -171 0.794 12 0.004 86 0.942 -162 Impedance Data (shown for fixed-tuned broadband circuit) VDD = 28 V, POUT = 35 W, IDQ = 300 mA Z Source Z Load G S D Z0 = 50 /G87 Frequency Z Source /G87 Z Load /G87 MHz R jX R jX 850 1.48 -2.80 2.60 1.55 900 1.45 -1.65 2.60 2.30 950 1.35 -0.30 2.68 3.40 1000 1.10 0.88 2.70 4.15

Test Circuit Schematic for f = 960 MHz DUT PTF 10007 C1, C5 39 pF, Capacitor ATC 100 B C2 7.5 pF, Capacitor ATC 100 B C3 0.6 –6.0 pF, Trimmer Capacitor, Johanson, 5701-PC C4 0.35 –3.5 pF, Trimmer Capacitor, Johanson, 5801-PC C6, C8 51 pF, Capacitor ATC 100 B C7, C9 0.1 /G109F, 50 V, Capacitor, Digi-Key P4917-ND C10 100 /G109F, 50 V, Electrolytic Capacitor, Digi-Key P5276 L1 4 Turn, #20 AWG, .120 ” I.D. R1 1 K, 1/4 W Resistor R2 10 K, 1/4 W Resistor /G1081, /G1084 Microstrip 50 /G87 /G1082 0.185 /G108 960 MHz Microstrip 5.70 /G87 /G1083 0.240 /G108 960 MHz Microstrip 9.30 /G87 Circuit Board .028" Dielectric Thickness, /G101r = 4.0, AlliedSignal, G200, 2 oz. copper Test Circuit Parts Layout (not to scale)

Package Mechanical Specifications Package 20222 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA Specifications subject to change without notice. LF © 1997, 1998, 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10007 Uen Rev. C 11-09-00 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Artwork (not to scale)