PTB20193 ERICSSON | Alldatasheet

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Description

The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 60 Watts, 1.8–1.9 GHz • Class AB Characteristics • Gold Metallization • Silicon Nitride Passivated PTB 20193 60 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor 20193 LOT CODE Package 20223 Typical Output Power vs. Input Power 13579 1 1 1 3 Input Power (Watts) Output Power (Watts) VCC = 26 V ICQ = 150 mA f = 1.9 GHz Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 55 Vdc Collector-Emitter Voltage V CES 55 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 8 Adc Total Device Dissipation at Tflange = 25° C P D 233 W Above 25°C derate by 1.33 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70° C) R θJC 0.75 °C/W 9/28/98

e Frequency Z Source Z Load GHz R jX R jX Z Source Z Load Electrical Characteristics (100% Tested) Characteristics Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 60 mA, RBE = 27 Ω V(BR)CER 55 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 60 mA V (BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 V, IE = 25 mA V (BR)EBO 4 5 — Volts DC Current Gain V CE = 5 V, IC = 300 mA H fe 20 50 120 — RF Specifications (100% Tested) Characteristics Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 15 W, ICQ = 150 mA, f = 1.9 GHz) G pe 8.0 8.5 — dB Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 150 mA, f = 1.9 GHz) P-1dB 60 — — Watts Collector Efficiency CC = 26 Vdc, Pout = 60 W, ICQ = 150 mA, f = 1.9 GHz) ηC 43 — — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 30 W, ICQ = 150 mA, Ψ — — 5:1 — f = 1.9 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 60 W, ICQ = 150 mA) Z0 = 50 Ω 5/19/98

e Intermodulation Distortion vs. Power Output -40 -38 -36 -34 -32 -30 -28 -26 0 1 02 03 04 05 06 0 Output Power (Watts-PEP) IMD (dBc) VCC = 26 V ICQ = 150 mA f1 = 1.899 GHz f2 = 1.900 GHz Efficiency vs. Output Power 20 25 30 35 40 45 50 55 60 65 Output Power (Watts) Efficiency (%) VCC = 26 V ICQ = 150 mA f = 1.9 GHz Gain vs. Frequency (as measured in a broadband circuit) 7.0 7.5 8.0 8.5 9.0 1800 1820 1840 1860 1880 1900 Frequency (MHz) Gain (dB) VCC = 26 V ICQ = 150 mA Pout =15 W Typical Performance Ericsson Components RF Power Products

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Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20193 Uen Rev. A 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower 5/19/98