PTB20157 ERICSSON | Alldatasheet

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e Typical Output Power vs. Input Power 01234567 Input Power (Watts) Output Power (Watts) VCC = 22 V f = 1.85 GHz Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 50 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4 Vdc Collector Current (continuous) I C 6 Adc Total Device Dissipation at Tflange = 25°C P D 75 Watts Above 25°C derate by 0.43 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 2.33 °C/W PTB 20157 20 Watts, 1.35–1.85 GHz RF Power Transistor

Description

The 20157 is an NPN common base RF power transistor intended for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Package 20209 20157 LOT CODE • 20 Watts, 1.35–1.85 GHz • Class C Characteristics • 40% Min Collector Efficiency at 20 Watts • Gold Metallization • Silicon Nitride Passivated 9/28/98

e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 50 mA, RBE = 27 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V (BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V (BR)EBO 4 5 — Volts DC Current Gain V CE = 5 V, IC = 500 mA h FE 20 50 120 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz) G pe 67 — d B Collector Efficiency (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz) ηC 40 43 — % Load Mismatch Tolerance (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz Ψ — — 10:1 — —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 22 Vdc, Pout = 20 W) Frequency Z Source Z Load GHz R jX R jX Z Source Z Load

e Gain & Efficiency vs. Power Out 0 5 10 15 20 25 30 Output Power (Watts) Gain (dB) Efficiency (%) VCC = 22 V f = 1.85 GHz Gain & Return Loss vs. Frequency (as measured in a broadband circuit) Frequency (GHz) Gain (dB) -30 -25 -20 -15 -10 Return Loss (dB) VCC = 22 V Pout = 20 W Typical Performance Ericsson Components RF Power Products

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Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20157 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower