PTB20151 ERICSSON | Alldatasheet

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e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor 0123456789 Input Power (Watts) Output Power (Watts) VCC = 26 V ICQ = 100 mA f = 2.0 GHz Typical Output Power vs. Input Power Package 20223

Description

The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • 45 Watts, 1.8–2.0 GHz • Class AB Characteristics • 40% Collector Efficiency at 45 W • Gold Metallization • Silicon Nitride Passivated Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 50 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 7.7 Adc Total Device Dissipation at Tflange = 25° C P D 200 Watts Above 25°C derate by 1.2 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70° C) R θJC 0.85 °C/W 20151 LOT CODE 9/28/98

e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V( BR)CES 50 — — Volts Breakdown Voltage C to E IB = 0 A, IC = 100 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V( BR)EBO 4.0 5.0 — Volts DC Current Gain V CE = 5 V, IC = 1 A h FE 20 40 — — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 100 mA, f = 2 GHz) G pe 8.0 9.5 — dB Power Output at 1 dB Compression CC = 26 Vdc, POUT = 45 W, ICQ = 100 mA, f = 2 GHz) P-1dB 45.0 — — Watts Collector Efficiency CC = 26 Vdc, POUT = 45 W, ICQ = 100 mA, f = 2 GHz) ηC 40 47 — % Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 22.5 W, ICQ = 100 mA, Ψ — — 5:1 — f = 2 GHz—all phase angles at frequency of test) Typical Performance 1750 1800 1850 1900 1950 2000 2050 Frequency (MHz) Gain Output Power & Efficiency VCC = 26 V ICQ = 100 mA POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Efficiency (%) Gain (dB) Broadband Test Fixture Performance 1900 1925 1950 1975 2000 Frequency (MHz) Gain (dB) VCC = 26 V ICQ = 100 mA POUT = 45 W Gain (dB) Return Loss (dB) Efficiency (%) Efficiency (%)Return Loss (dB)- 5 -15 -25 -35 5/4/98

e Output Power vs. Supply Voltage 22 23 24 25 26 27 Supply Voltage (Volts) Output Power (Watts) ICQ = 100 mA f = 2.0 GHz Intermodulation Distortion vs. Power Output -42 -40 -38 -36 -34 -32 0 1 02 03 04 05 0 Output Power (Watts-PEP) IMD (dBc) VCC = 26 V ICQ = 60 mA f1 = 1.999 GHz f2 = 1.998 GHz Power Gain vs. Output Power 0.1 1.0 10.0 100.0 Output Power (Watts) Power Gain (dB) VCC = 26 V f = 2.0 GHz ICQ = 100 mA ICQ = 50 mA ICQ = 25 mA Frequency Z Source Z Load GHz R jX R jX Z Source Z Load Impedance Data (VCC = 26 Vdc, POUT = 45 W, ICQ = 100 mA) 5/11/98

e Z0 = 10 Ω Test Circuit Artwork (1 inch ) Parts Layout (not to scale) 5/4/98

e Schematic for f = 2 GHz Q1 PTB 20151 NPN RF Transistor l1, l9 Microstrip 50 Ω l2 .1 λ 2 GHz Microstrip 75 Ω l3 .065 λ 2 GHz Microstrip 16 Ω l4 .095 λ 2 GHz Microstrip 12.5 Ω l5 .055 λ 2 GHz Microstrip 9.7 Ω l6 .055 λ 2 GHz Microstrip 12.5 Ω l7 .065 λ 2 GHz Microstrip 22 Ω C1, C6 0.1 µF 1206 Chip C2, C7 10 µF, 35 V SMT Tantalum C3, C4, C8, C10 20 pF ATC-100 C5, C9 0–4 pf Johanson Trimmer L1 56 nh SMT Inductor L2, L4 3 Turn #22, 0.25” O.D. L3 4 mm. SMT Ferrite R1 22 Ω 1206 SMT Resistor Board 0.031 G-200 Solid Copper Bottom, AlliedSignal Bias Parts (not shown on layout) Q2 BCP 56 SMT NPN Transistor D1 BAV 99 Diode C10, C11 0.1 pF SMT Capacitor R2 2K Potentiometer R3, R4 10 Ω 1206 SMT Resistor * Thermally linked to RF device. Ericsson Components RF Power Products

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Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. © 1996 Ericsson Inc. EUS/KR 1301-PTB 20151 Uen Rev. C 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower