PTB20125 ERICSSON | Alldatasheet

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Description

The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a final stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • 100 Watts, 1.8–2.0 GHz • Class AB Characteristics • 40% Collector Efficiency at 100 Watts • Gold Metallization • Silicon Nitride Passivated PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Package 20225 * 20125 LOT CODE 1750 1800 1850 1900 1950 2000 2050 Frequency (MHz) Gain (dB) 100 120 140 Output Power & Efficiency VCC = 26 V ICQ = 200 mA Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) Efficiency (%) Gain (dB) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 55 Vdc Collector-Base Voltage V CBO 55 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 14 Adc Total Device Dissipation at Tflange = 25°C P D 400 Watts Above 25°C derate by 2.3 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 0.44 °C/W * This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications. 5/19/98

e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V (BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 20 mA V (BR)EBO 4.0 5.0 — Volts DC Current Gain V CE = 10 V, IC = 1.5 A h FE 30 50 120 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 40 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz) Gpe 7.0 8.0 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 100 W, ICQ = 2 x 100 mA, f = 2 GHz) ηC 40 45 — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 100 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz Ψ — — 5:1 — —at all phase angles) Typical Performance Broadband Test Fixture Performance 1900 1925 1950 1975 2000 Frequency (MHz) Gain (dB) VCC = 26 V ICQ = 200 mA Pout = 50 W Gain (dB) Return Loss (dB) Efficiency (%) Efficiency (%)Return Loss (dB)- 5 -15 -25 -35 Output Power vs. Supply Voltage 100 110 120 130 140 22 23 24 25 26 27 Supply Voltage (Volts) Output Power (Watts) ICQ = 200 mA f = 2000 MHz

e Power Gain vs. Output Power 0.1 1.0 10.0 100.0 Output Power (Watts) Power Gain (dB) VCC = 26 V f = 2000 MHz ICQ = 200 mA ICQ = 100 mA ICQ = 50 mA 100 120 140 160 0 5 10 15 20 25 30 Input Power (Watts) Output Power (Watts) Vcc = 26 V ICQ = 200 mA f = 2000 MHz Typical Output Power vs. Input Power Intermodulation Distortion vs. Power Output -40 -39 -38 -37 -36 -35 -34 -33 -32 -31 -30 10 20 30 40 50 60 70 80 90 100 Output Power (Watts-PEP) IMD (dBc) VCC = 26 V ICQ = 2 x 50 mA f1 = 1.999 GHz f2 = 1.998 GHz Z Source Z Load Frequency Z Source Z Load GHz R jX R jX Impedance Data (VCC = 26 Vdc, Pout = 100 W, ICQ = 2 x 100 mA) Z0 = 50 Ω

e Placement Diagram (not to scale) Test Circuit Block Diagram for f = 2 GHz Q1 PTB 20125 NPN RF Transistor l1, l2, l21, l22 .25 λ 2GHz Microstrip 50 Ω l3, l4 .085 λ 2GHz Microstrip 80 Ω l5, l6 .067 λ 2GHz Microstrip 20 Ω l7, l8, l11, l12 .0217 λ 2GHz Microstrip 11.7 Ω l9, l10 .053 λ 2GHz Microstrip 8.15 Ω l13, l14 .055 λ 2GHz Microstrip 6.7 Ω l15, l16 .052 λ 2GHz Microstrip 11.45 Ω l17, l18 .060 λ 2GHz Microstrip 16.9 Ω l19, l20 .252 λ 2GHz Microstrip 75 Ω L1, L2 6.8 nh SMT Inductor L3, L4 56 nh SMT Inductor L5, L6 4 mm. SMT Ferrite C1, C2 0–4 pF Johanson Piston Trimmer C3-8, C17, C18 33 pF (B ATC 100) C9, C11, C13, C15 .1 µF 1206 C10, C12, C14, C16 10 µF SMT Tantalum R1, R2 22 Ω SMT T1, T2 UT 70-50 Board 0.031: G200, Solid Copper Bottom, AlliedSignal

e Artwork (1 inch ) Ericsson Components RF Power Products

675 Jarvis Drive

Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. © 1996 Ericsson Inc. EUS/KR 1301-PTB 20125 Uen Rev. C 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower