PTB20105 ERICSSON | Alldatasheet

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e 01234 Input Power (Watts) Output Power (Watts) VCC = 25 V ICQ = 0.100 A f = 960 MHz Output Power vs. Input Power Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 40 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 5.0 Adc Total Device Dissipation at Tflange = 25°C P D 70 Watts Above 25°C derate by 0.4 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 2.5 °C/W PTB 20105

20 Watts, 925–960 MHz

Cellular Radio RF Power Transistor

Description

The 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • Class AB Characteristics • Performance at 960 MHz, 25 VCC - Output Power = 20 W - Efficiency = 50% Min • Gold Metallization • Silicon Nitride Passivated Package 20201 20105 LOT CODE 9/28/98

e Z Source Z Load Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V (BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V (BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V (BR)EBO 3.5 5.0 — Volts DC Current Gain V CE = 5 V, IC = 1 A h FE 20 50 120 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz) G pe 91 0 — d B Collector Efficiency (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, f = 960 MHz) ηC 50 — — % Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA, Ψ — — 30:1 — f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 20 W, ICQ = 100 mA) Frequency Z Source Z Load MHz R jX R jX 925 3.1 -1.8 3.1 1.4 942 3.0 -1.5 2.9 1.4 960 2.9 -1.2 2.7 1.4

e Efficiency vs. Output Power 4 8 12 16 20 24 Output Power (Watts) Efficiency (%) VCC = 25 V ICQ = 0.100 A f = 960 MHz Gain vs. Frequency (as measured in a broadband circuit) 925 930 935 940 945 950 955 960 Frequency (MHz) Gain (dB) VCC = 25 V ICQ = 0.100 A Pout = 20 W Output Power vs. Supply Voltage 17 19 21 23 25 27 Vcc, Supply Voltage Output Power (Watts) ICQ = 0.100 A f = 960 MHz Pin = 2.2 W Typical Performance Ericsson Components RF Power Products

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Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20105 Uen Rev. C 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower