PTB20080 ERICSSON | Alldatasheet
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e Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 50 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 3.4 Adc Total Device Dissipation at Tflange = 25° C P D 123 Watts Above 25° C derate by 0.7 W/°C Storage Temperature Range T STG 150 °C Thermal Resistance (Tflange = 70°C) R θJC 1.43 °C/W Input Power (Watts) Output Power (Watts) 0 Efficiency (%) VCC = 26 V ICQ = 125 mA f = 1.65 GHz Typical Output Power & Efficiency vs. Input Power PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor 20080 EXXX
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally- matched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 1.6–1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated Package 20209 9/28/98
e Frequency Z Source Z Load GHz R jX R jX Z Source Z Load Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to B VBE = 0 V, IC = 15 mA V (BR)CES 50 — — Vdc Breakdown Voltage E to B IC = 5 mA V (BR)EBO 4.0 — — Vdc Cut-off Current C to E V CE = 26 V I CES —— 1 0 m A DC Current Gain V CE = 5 V, IC = 2 A h FE 30 — — — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Power Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 125 mA, f = 1.65 GHz) G pe 10.5 11.5 — dB Power Output at 1 dB Compression CC = 26 Vdc, ICQ = 125 mA, f = 1.65 GHz) P-1dB 25 — — Watts Collector Efficiency CC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, f = 1.65 GHz) ηC 40 44 — % Load Mismatch Tolerance CC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, Ψ — — 10:1 — f = 1.65 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA Z0 = 50 Ω 5/6/98
e Gain vs. Frequency (as measured in a broadband circuit) Frequency (GHz) Gain (dB) VCC = 26 V ICQ = 125 mA PIN = 0.65 W Typical Performance Ericsson Components RF Power Products
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Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20080 Uen Rev. C 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower