PTB20051 ERICSSON | Alldatasheet

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e Typical Output Power vs. Input Power 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 0.5 1 1.5 2 Input Power (Watts) Output Power (Watts) VCC = 26 V ICQ = 40 mA f = 1.501 GHz Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 50 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 0.7 Adc Total Device Dissipation at Tflange = 25°C P D 28 Watts Above 25°C derate by 0.16 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 6.2 °C/W PTB 20051 6 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor

Description

The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 6 Watts, 1.465–1.513 GHz • Class AB Characteristics • 35% Collector Efficiency at 4 Watts • Gold Metallization • Silicon Nitride Passivated Package 20201 20051 LOT CODE 9/28/98

e Z Source Z Load Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V (BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V (BR)EBO 4 5 — Volts DC Current Gain V CE = 10 V, IC = 0.7 A h FE 20 50 120 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) G pe 8.0 — — dB Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1.501 GHz) P-1dB 6.5 — — Watts Collector Efficiency CC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) ηC 35 — — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, Ψ — — 5:1 — f = 1.501 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA) Frequency Z Source Z Load GHz R jX R jX Ericsson Components RF Power Products

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Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20051 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower