PTB20038 ERICSSON | Alldatasheet
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e 012345 Input Power (Watts) Output Power (Watts) VCC = 25 V ICQ = 100 mA f = 900 MHz Typical Output Power vs. Input Power Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 40 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 6.7 Adc Total Device Dissipation at Tflange = 25°C P D 65 Watts Above 25°C derate by 0.37 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 2.7 °C/W PTB 20038
25 Watts, 860–900 MHz
Cellular Radio RF Power Transistor 20038 LOT CODE
Description
The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. It is specifically designed for high efficiency operation at average power levels around 10 watts with high PEP capacity. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 860–900 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Package 20200 9/28/98
e 840 855 870 885 900 915 Frequency (MHz) Efficiency (%) VCC = 25 V ICQ = 100m A Circuit Tuned for
25 W Load Line
Pout = 25 W Pout = 10 W Efficiency vs. Frequency (as measeured in a broadband circuit) Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V( BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V( BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V( BR)EBO 3.5 5 — Volts DC Current Gain V CE = 5 V, IC = 1 A h FE 20 50 100 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz) G pe 9.0 10.0 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz) ηC 50 — — % Gain (VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz) G pe 10 11 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz) ηC 35 — — % Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, Ψ — — 30:1 — f = 900 MHz—all phase angles at frequency of test) Typical Performance Ericsson Components RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20038 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower