PTB20030 ERICSSON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
e Input Power (Watts) Output Power (Watts) VCC = 24 V ICQ = 200 mA f = 470 MHz Typical Output Power vs. Input Power Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 48 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 6.0 Adc Total Device Dissipation at Tflange = 25°C P D 63 Watts Above 25°C derate by 0.30 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 2.8 °C/W PTB 20030
15 Watts, 420–470 MHz
Description
The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 420–470 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride Passivated Package 20201 20030 LOT CODE 9/28/98
e Z Source Z Load Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E Ib = 0 A, IC = 40 mA, RBE = 22 Ω V(BR)CER 50 65 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 40 mA V (BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V (BR)EBO 3.5 5 — Volts DC Current Gain V CE = 5 V, IC = 0.4 A h FE 20 50 120 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz) G pe 11.0 13.0 — dB Collector Efficiency (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 24 Vdc, Pout = 15 W(PEP), ICQ = 200 mA, IMD — -28 — dBc f1 = 469 MHz, f2 = 470 MHz) Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, Ψ — — 10:1 — f = 420 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA) Frequency Z Source Z Load MHz R jX R jX
e Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 410 420 430 440 450 460 470 Frequency (MHz) Gain (dB) Efficiency (%) VCC = 24 V ICQ = 50 mA Pout = 1.5 W Gain (dB) Efficiency (%) Typical Performance Ericsson Components RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20030 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower