PTB20006 ERICSSON | Alldatasheet
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Technical content
e PTB 20006
4 Watts, 860–900 MHz
Cellular Radio RF Power Transistor Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 40 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 1.7 Adc Total Device Dissipation at Tflange = 25°C P D 35 Watts Above 25°C derate by 0.2 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 5.0 °C/W 20006 LOT CODE
Description
The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 4 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Input Power (Watts) Output Power (Watts) VCC = 25 V ICQ = 50 A f = 900 MHz Typical Output Power vs. Input Power Package 20201 9/28/98
e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V( BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V( BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V( BR)EBO 3.5 5 — Volts DC Current Gain V CE = 5 V, IC = 250 mA h FE 20 50 120 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) G pe 11.0 13.0 — dB Collector Efficiency CC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) ηC 45 — — % Intermodulation Distortion (VCC = 25 Vdc, POUT = 4 W(PEP), ICQ = 50 mA, IMD — -25 — dBc f1 = 860MHz, f2 = 861 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz Ψ — — 30:1 — —all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA) Frequency Z Source Z Load MHz R jX R jX 860 5.3 -5.5 2.4 11.0 880 5.0 -5.0 2.3 11.6 900 4.9 -4.4 2.1 12.0 Z Source Z Load 10/28/98
e Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 840 855 870 885 900 915 Frequency (MHz) Gain (dB) Efficiency (%) VCC = 25 V ICQ = 50 mA Pout = 4 W Gain (dB) Efficiency (% ) Ericsson Components RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20006 Uen Rev. D 10-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower