PTB20003 ERICSSON | Alldatasheet
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e Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage V CER 40 Vdc Collector-Base Voltage V CBO 50 Vdc Emitter-Base Voltage (collector open) V EBO 4.0 Vdc Collector Current (continuous) I C 1.7 Adc Total Device Dissipation at Tflange = 25°C P D 35 Watts Above 25°C derate by 0.2 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) R θJC 5.0 °C/W PTB 20003
4 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified 25 Volts 4 Watts, 915–960 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Input Power (Watts) Output Power (Watts) VCC = 25 V ICQ = 50 mA f = 960 MHz Typical Output Power vs. Input Power Package 20201 2000320003200032000320003 LOT CODE 9/28/98
e Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V (BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V (BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V (BR)EBO 4 5 — Volts DC Current Gain V CE = 5 V, IC = 250 mA h FE 20 50 120 — RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, f = 960 MHz) G pe 11 13 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, f = 960 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 25 Vdc, Pout = 4 W(PEP), ICQ = 50 mA, IMD — -28 — dBc f1 = 959.999 MHz, f2 = 960.000 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA, Ψ — — 30:1 — f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 4 W, ICQ = 50 mA) Frequency Z Source Z Load MHz R jX R jX 915 6.7 -1.8 6.8 15.5 935 6.8 -1.3 6.9 16.0 960 6.8 -0.7 7.0 17.0 Z Source Z Load
e Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 900 915 930 945 960 975 Frequency (MHz) Gain (dB) Efficiency (%) VCC = 25 V Pout = 4 W Efficiency (%) Gain (dB) Ericsson Components RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20003 Uen Rev. D 09-28-98 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower