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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
- Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm 2. Pinning information PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Table 1. Quick reference data Table 2. Pinning information
Description
1 G gate
SOT23 (TO-236AB) 2Ss o u r c e
3 D drain
S D G mbb076 /G32 1 of 4sales@zpsemi.com www.zpsemi.com
- Ordering information 4. Marking [1] % = placeholder for manufacturing site code 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 3. Ordering information PMV28UN TO-236AB plastic surface-mounted package; 3 leads SOT23 Table 4. Marking codes Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Table 6. Thermal characteristics
Table 7. Characteristics