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Technical content
20 V, single N-channel Trench MOSFET
1.1 General description
1.2 Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Table 2. Pinning information
1 G gate
2 S source
3 D drain
Table 3. Ordering information Table 4. Marking codes Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Symbol Parameter Conditions Min Typ Max Unit VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 1 A; Tj = 25 °C - 140 165 mΩ VGS = 4.5 V; ID = 1 A; Tj = 150 °C - 208 248 mΩ VGS = 2.5 V; ID = 1 A; Tj = 25 °C - 175 220 mΩ RDSon drain-source on-state resistance VGS = 1.8 V; ID = 0.25 A; Tj = 25 °C - 237 337 mΩ gfs forward transconductance VDS = 10 V; ID = 1 A; Tj = 25 °C - 3.4 - S Dynamic characteristics QG(tot) total gate charge - 1.1 1.65 nC QGS gate-source charge - 0.15 - nC QGD gate-drain charge VDS = 10 V; ID = 1 A; VGS = 4.5 V; Tj = 25 °C - 0.3 - nC Ciss input capacitance - 83 - pF Coss output capacitance - 37 - pF Crss reverse transfer capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 26 - pF td(on) turn-on delay time - 6 - ns tr rise time - 12 - ns td(off) turn-off delay time - 16 - ns tf fall time VDS = 10 V; ID = 1 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C - 8 - ns Source-drain diode VSD source-drain voltage IS = 0.7 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V PMV170UN 4 of 4sales@zpsemi.com www.zpsemi.com