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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

  1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 1.8 V R DSon rated  Very fast switching  Trench MOSFET technology

1.3 Applications

 Relay driver  High-speed line driver  High-side loadswitch  Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm 2. Pinning information PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Table 1. Quick reference data Table 2. Pinning information

Description

1 G gate

SOT23 (TO-236AB) 2Ss o u r c e

3 D drain

S D G 017aaa257 1 of 4sales@zpsemi.com www.zpsemi.com

  1. Ordering information 4. Marking [1] % = placeholder for manufacturing site code

Table 3. Ordering information PMV160UP TO-236AB plastic surface-mounted package; 3 leads SOT23 Table 4. Marking codes

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

Table 6. Characteristics