PM606BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. UNITS 3.7 ± 20 A °C-55 to 150 VGS LIMITS ID IDM TYPICAL 0.5 0.8 ID 30V RqJA 146Junction-to-Ambient2 Continuous Drain Current TA = 25 ° C SYMBOL Pulsed Drain Current1 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 20mΩ @VGS = 10V 5A PD TJ, TSTG MAXIMUMTHERMAL RESISTANCE Operating Junction & Storage Temperature Range SYMBOL TA = 25 ° C TA = 70 ° C Power Dissipation W Drain-Source Voltage VDS 30 V REV 1.0 1 2014/9/10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 23 31 17 20 26 S 329 7.8 1.2 2.3 0.7 A 1.1 V 10 nS 2.6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = 5A, dlF/dt = 100 A/ms Gate Threshold Voltage DYNAMIC V VDS = 0V, VGS = ± 20V mA Drain-Source Breakdown Voltage VGS =4.5V, ID = 5A VDS = 20V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA Drain-Source On-State Resistance1 Ciss Coss TEST CONDITIONS Crss RDS(ON) VGS = 10V, ID = 5A IGSS IDSS VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 24V, VGS = 0V VDS = 5V, ID = 5A STATIC LIMITS UNITSPARAMETER SYMBOL Total Gate Charge2 VDS = 15V, VGS = 10V, ID = 5A Input Capacitance Output Capacitance Reverse Transfer Capacitance mΩ Gate-Source Charge2 gfs VGS = 0V, VDS = 15V, f = 1MHz pF td(off) tf Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 VDS = 15V ID @ 5A, VGS = 10V, RGEN = 6Ω nC nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Qg Qgs Qgd td(on) tr IF = 5A, VGS = 0V Continuous Current Forward Voltage1 IS VSD REV 1.0 2 2014/9/10

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/9/10

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/9/10

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/10