PM515BA

PM515BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper,in a still air environment with TA =25° C. VDS -20 V PDPower Dissipation TA = 70 ° C SYMBOL -55 to 150 MAXIMUM 0.6 RqJA 131 °CJunction & Storage Temperature Range Tj, Tstg 0.9 W IDM TYPICAL A ID TA = 25 ° C LIMITS UNITS -20 -2.4 VGS ±8 TA = 70 ° C -3A IDRDS(ON) PARAMETERS/TEST CONDITIONS Gate-Source Voltage 65mΩ @VGS = -4.5V Drain-Source Voltage Pulsed Drain Current1 -20V Continuous Drain Current THERMAL RESISTANCE TA = 25 ° C Junction-to-Ambient2 SYMBOL REV 1.0 1 2017/1/11

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.3 -0.5 -1 ± 100 nA -10 91 120 70 85 56 65 11 S 561 7.3 Gate-Source Charge2 1 Gate-Drain Charge2 2 -0.75 A -1.2 V 10 nS 3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mΩDrain-Source On-State Resistance1 RDS(ON) VGS = -2.5V, ID = -2A V(BR)DSS VGS(th) Drain-Source Breakdown Voltage VDS = -5V, ID = -2.5A Total Gate Charge2 VDS = 0V, VGS = ± 8V Coss Forward Transconductance1 Ciss UNITS Gate Threshold Voltage IGSS DYNAMIC Crss VGS = 0V, ID = -250mA Zero Gate Voltage Drain Current Gate-Body Leakage VDS = -16V, VGS = 0V gfs VGS = -4.5V, ID = -2.5A LIMITS VVDS = VGS, ID = -250mA STATIC PARAMETER SYMBOL TEST CONDITIONS VGS = 0V, VDS = -10V, f = 1MHz nS Turn-On Delay Time2 Rise Time2 Input Capacitance Turn-Off Delay Time2 tf Output Capacitance nCVDS= -10V,VGS= -4.5V,ID= -2.5A Qgd Forward Voltage1 IS tr td(on) VSD Reverse Recovery Time td(off) IF = -2.5A, dIF/dt = 100A / mS IF = -2.5A, VGS = 0V Continuous Current Reverse Recovery Charge Qrr trr VDS = -10V, VGS= -4.5V ID @ -2.5A, RGEN = 6Ω VGS = -1.8V, ID = -1A VDS = -10V, VGS = 0V , TJ = 70 ° C mAIDSS pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Reverse Transfer Capacitance Qg Qgs REV 1.0 2 2017/1/11

P-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/11

P-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/11

P-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/11

P-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：7B ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 REV 1.0 6 2017/1/11

P-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/11

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/11