PM514BA UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. W UNITS 2.7 ±8 V A VGS 3.3 LIMITS ID IDM TYPICAL 0.4 0.7 MAXIMUM Pulsed Drain Current1 THERMAL RESISTANCE 40mΩ @VGS = 4.5V TA = 25 ° C 3.3A SYMBOL ID 20V TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage SYMBOL °C-55 to 150 RqJA 170Junction-to-Ambient2 environment with TA =25° C. PD TJ, TSTGOperating Junction & Storage Temperature Range 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air REV 1.1 1 2016/6/28
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.5 0.7 1 ± 100 nA 55 80 36 50 29 40 16 S 331 0.6 1.7 0.7 A 1 V 10 nS 2 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Reverse Recovery Time trr IF = 3A, dlF/dt = 100A /mS Reverse Transfer Capacitance V IGSS IDSS Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 3A VDS = 0V, VGS = ± 8V mAVDS = 10V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA Ciss Coss DYNAMIC Output Capacitance Gate-Body Leakage VDS = 16V, VGS = 0V Gate Threshold Voltage SYMBOL Reverse Recovery Change Qrr VGS = 0V, VDS = 10V, f = 1MHz VGS = 1.8V, ID = 2.5A Zero Gate Voltage Drain Current V(BR)DSS Total Gate Charge2 Drain-Source Breakdown Voltage Forward Transconductance1 gfs Input Capacitance VGS(th) VGS = 0V, ID = 250mA PARAMETER TEST CONDITIONS Gate-Source Charge2 VGS = 2.5V, ID = 2.8A STATIC LIMITS UNITS nC nS tf VDS = 5V, ID = 3A VDS = 10V,VGS = 4.5V, ID= 3A pF Crss mΩ Rise Time2 IF = 3A, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) VDD = 10V ID @ 3A, VGEN= 4.5V, RG = 6ΩTurn-Off Delay Time2 Qg Fall Time2 Qgs Qgd td(on) tr Gate-Drain Charge2 td(off) Turn-On Delay Time2 REV 1.1 2 2016/6/28
N-Channel Enhancement Mode MOSFET REV 1.1 3 2016/6/28
N-Channel Enhancement Mode MOSFET REV 1.1 4 2016/6/28
N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2016/6/28
N-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：2U ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05
13.5 MAX
1.4max
8 MAX
∮ 8.00 0.3 REV 1.1 6 2016/6/28
N-Channel Enhancement Mode MOSFET REV 1.1 7 2016/6/28
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2016/6/28