PM513BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz Copper. in a still air environment with TA=25° C Drain-Source Voltage VDS -20 V MAXIMUMTHERMAL RESISTANCE Junction & Storage Temperature Range SYMBOL RqJA TJ, TSTG 130 TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current TA = 25 ° C PD RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 100mΩ @VGS = -4.5V VGS -3A ID -20V SYMBOL LIMITS ID IDM TYPICAL 0.6 0.9 Pulsed Drain Current1 W UNITS -20 -2.4 ±8 V -55 to 150 A Junction-to-Ambient2 Ver 1.0 1 2012/12/28

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.3 -0.5 -1 ± 100 nA -10 -20 A 140 190 109 130 80 100 8.1 S 434 6.3 0.7 9.4 -3 A -1.2 V 11 nS 3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VGS = -2.5V, ID = -2A pF Qg PARAMETER mΩ VDS = -5V, ID = -2.5A VDS = -10V, VGS = -4.5V, ID = -2.5A VGS = 0V, VDS = -10V, f = 1MHzCoss RDS(ON) VGS = -4.5V, ID = -2.5A tr Crss gfs tf Gate-Drain Charge2 Continuous Current IS Turn-On Delay Time2 VDS = -10V ID @ -2.5A, VGS=-4.5V, RGEN = 6Ωtd(off) Rise Time2 Turn-Off Delay Time2 Drain-Source On-State Resistance1 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Ciss nC nS Qgs Qgd td(on) Total Gate Charge2 Gate-Source Charge2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance1 VDS = -16V, VGS = 0V On-State Drain Current1 ID(ON) STATIC LIMITS UNITSYMBOL TEST CONDITIONS VDS = -5V, VGS = -4.5V V(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VGS(th) VGS = 0V, ID = -250mA Gate Threshold Voltage DYNAMIC V IGSS IDSS mA Drain-Source Breakdown Voltage VGS = -1.8V, ID = -1A VDS = -10V, VGS = 0V , TJ = 70 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 8V Forward Voltage1 VSD IF = -2.5A, VGS = 0V Reverse Recovery Time trr IF = -2.5A, dlF/dt=100A/mS Reverse Recovery Charge Qrr Ver 1.0 2 2012/12/28

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/12/28

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/12/28

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/12/28