PM509BA

PM509BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper PDPower Dissipation SYMBOL 0.7 W ± 20 A 177 LIMITS V UNITS -1.5 VGS -2A ID -30V Continuous Drain Current -55 to 150 MAXIMUM 0.4 TA = 25 ° C RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 120mΩ @VGS = 10V TA = 70 ° C TA = 25 ° C SYMBOL ID Pulsed Drain Current1 IDM TYPICALTHERMAL RESISTANCE RqJA Operating Junction & Storage Temperature Range Tj, Tstg Junction-to-Ambient2 Rev 1.1 1 2015/10/13

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1 -1.7 -3 ± 100 nA -10 -8 A 134 180 98 120 4.3 S 190 Total Gate Charge2 4.8 Gate-Source Charge2 0.5 Gate-Drain Charge2 1.3 -2 A -1.1 V 15 nS 8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VGS = 0V, ID = -250mADrain-Source Breakdown Voltage VDS= -15V,VGS= -10V, ID= -2A Zero Gate Voltage Drain Current Gate-Body Leakage VDS = -24V, VGS = 0V LIMITS nC V STATIC UNITS Gate Threshold Voltage IGSS RDS(ON) gfs mΩVGS = -10V, ID = -2A VDS = -10V, VGS = -10V DYNAMIC Crss VGS = 0V, VDS = -15V, f = 1MHz VDS = 0V, VGS = ± 20V VDS = -20V, VGS = 0V , TJ = 55 ° C mA On-State Drain Current1 ID(ON) IDSS VDS = -5V, ID = -2A pF VDS = VGS, ID = -250mA SYMBOL Forward Transconductance1 Ciss Coss PARAMETER VGS = -4.5V, ID = -1.5A V(BR)DSS TEST CONDITIONS td(on) VDD = -15V, VGS= -10V ID @ -2A, RG = 6Ω nS Turn-On Delay Time2 Rise Time2 VGS(th) Drain-Source On-State Resistance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 tr td(off) IF = -2A, dIF/dt = 100A / mS IF = -2A, VGS = 0V Continuous Current Reverse Recovery Charge Qrr Turn-Off Delay Time2 tf trrReverse Recovery Time Rev 1.1 2 2015/10/13

P-Channel Enhancement Mode MOSFET Rev 1.1 3 2015/10/13

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P-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：71 ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 Rev 1.1 6 2015/10/13

P-Channel Enhancement Mode MOSFET Rev 1.1 7 2015/10/13

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) Rev 1.1 8 2015/10/13