PM506BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 3The Power dissipation is based on RqJA t ≦10s value. UNITS 2.8 ± 20 V A VGS 3.5 LIMITS ID IDM TYPICAL 0.8 1.3 MAXIMUM Pulsed Drain Current1 THERMAL RESISTANCE 60mΩ @VGS = 10V TA = 25 ° C 3.5A SYMBOL ID 30V TA = 25 ° C TA = 70 ° CPower Dissipation3 Continuous Drain Current RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage SYMBOL °C-55 to 150 RqJA 90 PD TJ, TSTGOperating Junction & Storage Temperature Range 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air environment with TA =25° C. W 160 ° C / Wt ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA REV 1.1 1 2015/10/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.8 1.5 2.5 ± 100 nA 44 60 68 100 6 S 206 2.9 0.8 1.7 0.8 A 1.5 V 11.5 nS 3.5 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. trr IF = 3A, dlF/dt = 100A /ms VGS = 0V Reverse Transfer Capacitance V IGSS IDSS Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 1.5A mA VDS = 0V, VGS = ± 20V VDS = 20V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = 250mA Ciss Coss DYNAMIC Output Capacitance Gate-Body Leakage VDS = 24V, VGS = 0V Gate Threshold Voltage mΩ SYMBOL Reverse Recovery Change Qrr VGS = 0V, VDS = 15V, f = 1MHz VGS = 10V, ID = 3A Zero Gate Voltage Drain Current V(BR)DSS Reverse Recovery Time Drain-Source Breakdown Voltage Forward Transconductance1 gfs Input Capacitance VGS(th) VGS = 0V, ID = 250mA nC Total Gate Charge2 PARAMETER TEST CONDITIONS STATIC LIMITS UNITS VDD = 15V ID @ 3A, VGS= 10V, RGEN = 6ΩTurn-Off Delay Time2 nS tf VDS = 5V, ID = 3A VDS = 15V,ID= 3A pF Crss Qg(VGS=4.5V) Qg(VGS=10V) IF = 3A, VGS = 0V Continuous Current2 Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Qgs Qgd td(on) tr Gate-Drain Charge2 td(off) Turn-On Delay Time2 Rise Time2 Gate-Source Charge2 REV 1.1 2 2015/10/13

N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/10/13

N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/10/13

N-Channel Enhancement Mode MOSFET REV 1.1 5 2015/10/13

N-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：6Y ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 REV 1.1 6 2015/10/13

N-Channel Enhancement Mode MOSFET REV 1.1 7 2015/10/13

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/10/13