PM505BA

PM505BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper. Junction-to-Ambient2 THERMAL RESISTANCE RDS(ON) PARAMETERS/TEST CONDITIONS Gate-Source Voltage 40mΩ @VGS = -4.5V TA = 70 ° C TA = 25 ° C Pulsed Drain Current1 RqJA TA = 25 ° C SYMBOL TA = 70 ° C -4A ID -20V Continuous Drain Current LIMITS UNITS -21 VGS Operating Junction & Storage Temperature Range Tj, Tstg ID IDM TYPICAL -55 to 150 MAXIMUM 0.6 0.9 W A 126 V SYMBOL PDPower Dissipation REV 1.0 1 2015/7/3

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.3 -0.6 -1 ± 100 nA -10 67 100 50 71 40 55 33 40 17 S 1157 106 11.9 Gate-Source Charge2 1.6 Gate-Drain Charge2 2.5 -0.6 A -1.3 V 11.4 nS 2.9 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mΩDrain-Source On-State Resistance1 RDS(ON) VGS = -1.5V, ID = -1A VGS = -1.8V, ID = -2A VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Reverse Recovery Time td(off) IF = -3.5A, dIF/dt = 100A / mS IF = -3.5A, VGS = 0V Continuous Current Reverse Recovery Charge Qrr VDS = -10V, VGS = 0V , TJ = 55 ° C mAIDSS trr Reverse Transfer Capacitance Qg Qgs Qgd Forward Voltage1 IS tr td(on) VDD = -10V, VGS= -4.5V ID @ -3.5A, RG = 6Ω VGS = 0V, VDS = -10V, f = 1MHz nS Turn-On Delay Time2 Rise Time2 Input Capacitance Turn-Off Delay Time2 tf Output Capacitance Coss PARAMETER Forward Transconductance1 Ciss VGS = -2.5V, ID = -3.5A V(BR)DSS VGS(th) SYMBOL TEST CONDITIONS pF VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 8V gfs VGS = -4.5V, ID = -3.5A nC V STATIC UNITS Gate Threshold Voltage IGSS DYNAMIC Crss VGS = 0V, ID = -250mADrain-Source Breakdown Voltage VDS= -10V,VGS= -4.5V,ID= -3.5A Zero Gate Voltage Drain Current Gate-Body Leakage VDS = -16V, VGS = 0V VDS = -5V, ID = -3.5A Total Gate Charge2 LIMITS REV 1.0 2 2015/7/3

P-Channel Enhancement Mode MOSFET REV 1.0 3 2015/7/3

P-Channel Enhancement Mode MOSFET REV 1.0 4 2015/7/3

P-Channel Enhancement Mode MOSFET REV 1.0 5 2015/7/3

P-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：77 ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 REV 1.0 6 2015/7/3

P-Channel Enhancement Mode MOSFET REV 1.0 7 2015/7/3

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/7/3