PM503BA

PM503BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper. PDPower Dissipation SYMBOL ± 12 A 160 V IDM TYPICAL -55 to 150 MAXIMUM 0.5 RqJA LIMITS UNITS -1.5 VGS Operating Junction & Storage Temperature Range Tj, Tstg 0.7 W SYMBOL TA = 70 ° C -2A IDRDS(ON) PARAMETERS/TEST CONDITIONS Gate-Source Voltage 115mΩ @VGS = -10V ID TA = 70 ° C TA = 25 ° C Pulsed Drain Current1 -30V Continuous Drain Current THERMAL RESISTANCE TA = 25 ° C Junction-to-Ambient2 REV 1.0 1 2017/1/10

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -0.4 -0.95 -1.4 ± 100 nA -10 91 115 106 150 153 220 6 S 258 6.5 Gate-Source Charge2 0.5 Gate-Drain Charge2 1.2 -0.6 A -1.1 V 9.8 nS 2.5 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) VGS = -2.5V, ID = -1.5A mΩ VDS= -15V,VGS= -10V,ID= -2A Zero Gate Voltage Drain Current Gate-Body Leakage VDS = -24V, VGS = 0V VDS = -5V, ID = -2A Total Gate Charge2 VDS = 0V, VGS = ± 12V Coss nC V STATIC UNITS Gate Threshold Voltage IGSS DYNAMIC Crss VGS = 0V, ID = -250mA gfs VGS = -4.5V, ID = -1.5A LIMITS VDS = VGS, ID = -250mA PARAMETER Forward Transconductance1 Ciss V(BR)DSS VGS(th) SYMBOL Drain-Source Breakdown Voltage TEST CONDITIONS VDD = -15V, VGS= -10V ID @ -2A, RG = 6Ω VGS = 0V, VDS = -15V, f = 1MHz nS Turn-On Delay Time2 Rise Time2 Input Capacitance Turn-Off Delay Time2 tf Output Capacitance trr Reverse Transfer Capacitance Qg Qgs Qgd Forward Voltage1 IS tr td(on) VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Reverse Recovery Time td(off) IF = -2A, dIF/dt = 100A / mS IF = -2A, VGS = 0V Continuous Current Reverse Recovery Charge Qrr VGS = -10V, ID = -2A VDS = -20V, VGS = 0V , TJ = 55 ° C mAIDSS pF REV 1.0 2 2017/1/10

P-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/10

P-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/10

P-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/10

P-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：78 ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 REV 1.0 6 2017/1/10

P-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/10

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/10