PKE10BB UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 4The maximum current rating is package limited. ID Avalanche Current EAS MAXIMUM TA= 70 ° C 29.8 Power Dissipation3 TA = 25 ° C 6.25 mJ RqJA PD W Steady-State Junction-to-Case Junction-to-Ambient2 t ≦10sJunction-to-Ambient2 30V Continuous Drain Current4 TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE TC = 100 ° CPower Dissipation IDM RDS(ON) Drain-Source Voltage 2.5mΩ @VGS = 10V 117A ID TC = 25 ° C TA = 70 ° C Avalanche Energy L =0.1mH UNITS 200 TYPICAL VDS 30 V ID LIMITS IAS 37 RqJC TC = 25 ° C Steady-State RqJA SYMBOL Operating Junction & Storage Temperature Range SYMBOL A V ° C / W 62.5 117 ± 20 Pulsed Drain Current1 W VGSGate-Source Voltage °C-55 to 150TJ, Tstg PD Continuous Drain Current TA = 25 ° C REV 1.0 1 2017/12/11

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 2.9 3.7 1.8 2.5 95 S 2237 1092 0.87 Ω VGS =10V 40.5 VGS =4.5V 20.5 6.3 102 115 62.5 A 1 V 43 nS 41.9 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3The maximum current rating is package limited. Gate-Body Leakage VGS(th) LIMITS Qgd Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance QgTotal Gate Charge2 PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 20A VDS = 20V, VGS = 0V, TJ = 55 ° C Ciss VGS = 0V, ID = 250mA Rg VGS = 4.5V, ID = 16A IGSS VDS = VGS, ID = 250mA Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Zero Gate Voltage Drain Current Gate Resistance IF = 20A, VGS = 0V nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V pF IDSS Forward Transconductance1 VDS = 5V, ID = 20A Coss VDS = 0V, VGS = ± 20V gfs IF = 20A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS STATIC nC V UNITS REV 1.0 2 2017/12/11

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 7 2017/12/11

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2017/12/11