PKE00BB UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 4The maximum current rating is package limited. Pulsed Drain Current1 W VGSGate-Source Voltage °C-55 to 150TJ, Tstg PD Continuous Drain Current TA = 25 ° C A V ° C / W ± 20 SYMBOL Operating Junction & Storage Temperature Range SYMBOL IAS 25 RqJC TC = 25 ° C Steady-State RqJA UNITS 150 TYPICAL VDS 30 V ID LIMITS 31.2 ID TC = 25 ° C TA = 70 ° C Avalanche Energy L =0.1mH TC = 100 ° CPower Dissipation IDM RDS(ON) Drain-Source Voltage 4.1mΩ @VGS = 10V 75A 3.2 Junction-to-Ambient2 t ≦10sJunction-to-Ambient2 30V Continuous Drain Current4 TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE Steady-State Junction-to-Case TA = 25 ° C 5 mJ RqJA PD W ID Avalanche Current EAS MAXIMUM TA= 70 ° C 20 Power Dissipation3 REV 1.0 1 2017/12/11

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.9 2.3 ± 100 nA 5.8 7 3.2 4.1 54 S 1134 556 1.5 Ω VGS =10V 20.7 VGS =4.5V 10.7 3.1 4.8 34 A 1.2 V 30 nS 21 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3The maximum current rating is package limited. V UNITS IF = 13A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS STATIC nC Coss VDS = 0V, VGS = ± 20V gfs VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V pF IDSS Forward Transconductance1 VDS = 5V, ID = 13A tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr Zero Gate Voltage Drain Current Gate Resistance IF = 13A, VGS = 0V nSVDS = 15V, ID @ 13A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 VGS = 4.5V, ID = 13A IGSS VDS = VGS, ID = 250mA QgTotal Gate Charge2 PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 13A VDS = 20V, VGS = 0V, TJ = 55 ° C Ciss VGS = 0V, ID = 250mA Rg Qgd Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz VDS = 15V, VGS = 10V, ID = 13A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate-Body Leakage VGS(th) LIMITS REV 1.0 2 2017/12/11

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 7 2017/12/11

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2017/12/11