PKCP4EB UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested PDFN 5X6P 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value 4The maximum current rating is package limited. Pulsed Drain Current1 W Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA A V 1.5 ° C / W 202 ± 12 IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 IAS 74 RqJC UNITS 300 127 TYPICAL VDS 20 V ID LIMITS 273 TC = 25 ° C Avalanche Energy L =0.1mH RDS(ON) Drain-Source Voltage 1.2mΩ @VGS = 10V 202A ID TC = 25 ° C TA = 70 ° C 20V Continuous Drain Current4 TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE TC = 100 ° CPower Dissipation TJ, Tstg PD Steady-State 2.6 Continuous Drain Current TA = 25 ° C mJ RqJA PD W ID Avalanche Current EAS MAXIMUM TA= 70 ° C 36 Power Dissipation3 TA = 25 ° C 4.1 REV 1.0 1 2018/3/29

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.6 0.75 1.2 ± 30 mA 1.5 1.9 1 1.3 0.9 1.2 145 S 5920 1118 918 0.9 Ω VGS =10V 151 VGS =4.5V 74 6.6 118 191 148 69 A 1.2 V 52 nS 47 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) VGS = 2.5V, ID = 10A mΩVGS = 4.5V, ID = 10A V IF = 15A, dlF/dt = 100A / mS SYMBOL V(BR)DSS TEST CONDITIONS UNITS Coss VDS = 0V, VGS = ± 12V gfs STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC VDS = 16V, VGS = 0V pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 trr IF = 15A, VGS = 0V nSVDS = 10V, ID @ 15A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate Resistance VDS = 5V, ID = 15A QgTotal Gate Charge2 Ciss PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 15A VDS = 10V, VGS = 0V, TJ = 55 ° C Qgd Crss Input Capacitance VGS = 0V, VDS = 10V, f = 1MHz VDS = 10V, VGS = 10V, ID = 15A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate-Body Leakage VGS(th) LIMITS REV 1.0 2 2018/3/29

N-Channel Enhancement Mode MOSFET REV 1.0 3 2018/3/29

N-Channel Enhancement Mode MOSFET REV 1.0 4 2018/3/29

N-Channel Enhancement Mode MOSFET REV 1.0 5 2018/3/29

N-Channel Enhancement Mode MOSFET REV 1.0 6 2018/3/29

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 7 2018/3/29

N-Channel Enhancement Mode MOSFET REV 1.0 8 2018/3/29

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2018/3/29