PKC46DY UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS CH. 30V Q2 30V Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. Continuous Drain Current3 A Gate-Source Voltage V Avalanche Current IDM ± 20 TC = 25 ° C TA = 25 ° C Continuous Drain Current 34A SYMBOL Drain-Source Voltage Pulsed Drain Current1 VDS VGS TC = 100 ° C TA = 70 ° C Avalanche Energy 24 7.3 9.2 IDRDS(ON) TC = 100 ° C 9.6 TC = 25 ° C ID LIMITS 9.2 ID IAS mJ PD W 135 14.714.7 L = 0.1mH EAS UNITSUNITS 150 ± 20 99A PARAMETERS/TEST CONDITIONS 1.9mΩ @VGS = 10V 9.5mΩ @VGS = 10V Power Dissipation REV 1.0 1 2017/1/3

Dual N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=35A,Q2=35A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Q2 ± 100 Q1 ± 100 Q2 1 Q1 1 Q2 10 Q1 10 Q2 2.1 2.5 Q1 10.5 14 Q2 1.5 1.9 Q1 6.7 9.5 Q2 72 Q1 37 VGS = 10V, ID = 13A mΩDrain-Source On-State Resistance1 RDS(ON) VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VGS = 0V, ID = 250mADrain-Source Breakdown Voltage V(BR)DSS IGSS PARAMETER SYMBOL VDS = 0V, VGS = ± 20V VGS = 4.5V, ID = 16A 3.4Junction-to-Case Junction-to-Ambient2 STATIC LIMITSCH. TJ, TSTG 1.1 5.2 ° C / W TA = 70 ° C Power Dissipation TA = 25 ° C Gate-Body Leakage Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 ° C RqJA RqJC TEST CONDITIONS VGS(th) TEST CONDITIONS 1.7 W -55 to 150 Gate Threshold Voltage SYMBOLTHERMAL RESISTANCE Operating Junction & Storage Temperature Range PD MAXIMUM 1.5 2.4 UNITS mA V nA Forward Transconductance1 gfs VDS = 5V, ID = 20A VDS = 5V, ID = 10A S VGS = 4.5V, ID = 13A VGS = 10V, ID = 20A REV 1.0 2 2017/1/3

Dual N-Channel Enhancement Mode MOSFET Q2 2868 Q1 525 Q2 515 Q1 146 Q2 315 Q1 70 Q2 1.1 Q1 1.1 Q2 56 Q1 10.5 Q2 29 Q1 5.8 Q2 8.3 Q1 1.5 Q2 14 Q1 3.1 Q2 25 Q1 11 Q2 18 Q1 10 Q2 54 Q1 7 Q2 20 Q1 5 Q2 36 Q1 20 Q2 1 Q1 1.2 Q2 28 Q1 10 Q2 12 Q1 2 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=35A,Q2=35A. Gate-Source Charge2 DYNAMICDYNAMIC VGS = 0V, VDS = 15V, f = 1MHz VGS=4.5V Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance nS Rise Time2 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω VGS=10V Total Gate Charge2 Qg A Qgs Gate-Drain Charge2 Qgd VDS = 15V , ID = 20A VDS = 15V , ID = 13A nC Turn-On Delay Time2 td(on) VDS = 15V,ID @ 20A, VGS=10V, RGEN= 6Ω VDS = 15V ,ID @ 13A, VGS = 10V, RGEN =6Ω Reverse Recovery Time trr tr Turn-Off Delay Time2 td(off) Fall Time2 tf Continuous Current3 IS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Reverse Recovery Charge Qrr IF = 20A, dlF/dt = 100A /ms IF = 13A, dlF/dt = 100A /mS nS nC Forward Voltage1 VSD IF = 20A, VGS = 0V IF = 13A, VGS = 0V V REV 1.0 3 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 6 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/3

Dual N-Channel Enhancement Mode MOSFET ＊散热片形状会因为封装厂框架不同而有所差异。 REV 1.0 8 2017/1/3

Dual N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 9 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 10 2017/1/3

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 11 2017/1/3