PK6B2BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 35A. 4The Power dissipation is based on RqJA t ≦10s value Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA A V ° C / W Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS 120 TYPICAL VDS 30 V ID IDM SYMBOL LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 25 RqJC THERMAL RESISTANCE Avalanche Energy L =0.1mH ID TC = 25 ° C 30V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 6mΩ @VGS = 10V 52A TA = 70 ° C Steady-State ± 20 Pulsed Drain Current1 TC = 100 ° CPower Dissipation TJ, Tstg PD W mJ RqJA PD W2.5 TA= 70 ° C 14 Power Dissipation4 TA = 25 ° C 3.9 Continuous Drain Current TA = 25 ° C ID REV 1.0 1 2015/6/19

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.6 2.3 ± 100 nA 5.2 8.5 3.9 6 86 S 979 192 117 1.85 Ω VGS =10V 21 VGS =4.5V 11 2.3 17.2 36.8 25 A 1.2 V 11.5 nS 2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. V IF = 13A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 13A V(BR)DSS TEST CONDITIONS Ciss VDS = 5V, ID = 13A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 13A, VGS = 0V nSVDS = 15V, ID @ 13A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage VDS = 15V, VGS = 10V, ID = 13A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 13A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL LIMITS REV 1.0 2 2015/6/19

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/6/19

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/6/19

N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/6/19

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2015/6/19

N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/6/19

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/6/19