PK6B0SA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 47A. 4The Power dissipation is based on RqJA t ≦10s value TA= 70 ° C 16 Power Dissipation TA = 25 ° C 4 Continuous Drain Current TA = 25 ° C ID mJ RqJA PD W2.6 TC = 100 ° CPower Dissipation TJ, Tstg PD 33.8 TA = 70 ° C Steady-State ID TC = 25 ° C 30V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 5mΩ @VGS = 10V 56A THERMAL RESISTANCE Avalanche Energy L =0.1mH RqJC LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 26 UNITS 100 TYPICAL VDS 30 V ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 A V ° C / W ± 20 W Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA Pulsed Drain Current1 REV 1.0 1 2016/8/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.35 1.7 2.3 ± 100 nA 0.5 5.3 7 3.7 5 67 S 1165 227 146 2.6 Ω VGS =10V 25 VGS =4.5V 13 31 A 1 V 7.3 nS 0.5 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 47A. LIMITS Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 19A VDS = 20V, VGS = 0V, TJ = 55 ° C VDS = 15V, VGS = 10V, ID = 19A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 1mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg trr IF = 19A, VGS = 0V nSVDS = 15V, ID @ 19A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Qgd pF IDSS QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Ciss VDS = 5V, ID = 19A VDS = 0V, VGS = ± 20V gfs RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS IF = 19A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 16A V REV 1.0 2 2016/8/16

N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/8/16

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N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/8/16

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2016/8/16

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/8/16

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/8/16