PK6A6BA UNIKC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. VGSGate-Source Voltage A V 4 ° C / W Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS 100 26.6 TYPICAL VDS 40 V ID IDM SYMBOL LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 33.7 Junction-to-Case RqJC Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH ID Tc = 25 ° C 40V Continuous Drain Current Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 8mΩ @VGS = 10V 42A 56.8 TA = 70 ° C ± 20 Pulsed Drain Current1 TC = 100 ° CPower Dissipation TJ, Tstg PD W mJ 12.5 RqJA PD W1.5 TA= 70 ° C 9 Power Dissipation TA = 25 ° C 2.3 Continuous Drain Current TA = 25 ° C ID REV 1.0 1 2015/1/6
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 6.4 12 5.5 8 55 S 1672 206 124 1.3 Ω VGS =10V 34 VGS =4.5V 18 5.1 8.3 24 A 1.3 V 19.5 nS 9.4 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. V IF = 11A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 11A V(BR)DSS TEST CONDITIONS Ciss VDS = 5V, ID = 11A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 32V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 11A, VGS = 0V nSVDS = 15V, ID @ 11A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage VDS = 15V, VGS = 10V, ID = 11A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 11A VDS = 30V, VGS = 0V, TJ = 55 ° C SYMBOL LIMITS REV 1.0 2 2015/1/6
N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/1/6
N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/1/6
N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/1/6