PK6A4BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. ID Avalanche Current EAS MAXIMUM TA= 70 ° C 11 Power Dissipation3 TA = 25 ° C 4 Continuous Drain Current TA = 25 ° C mJ RqJA PD W2.7 TC = 100 ° CPower Dissipation TJ, Tstg PD Steady-State 40V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE RDS(ON) Drain-Source Voltage 10.5mΩ @VGS = 10V 14A ID TC = 25 ° C TA = 70 ° C Avalanche Energy L =0.1mH TC = 25 ° C UNITS 100 TYPICAL VDS 40 V ID LIMITS °C-55 to 150 IAS 21 RqJC ± 20 IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL A V ° C / W Pulsed Drain Current1 W Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA REV 1.0 1 2017/1/10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 2.3 ± 100 nA 10 14 8.6 10.5 56 S 937 118 2.6 Ω VGS =10V 17.6 VGS =4.5V 9.3 2.3 4.7 23 A 1.3 V 6.9 nS 1.1 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Gate-Body Leakage VGS(th) LIMITS Qgd Crss Input Capacitance VGS = 0V, VDS = 20V, f = 1MHz VDS = 20V, VGS = 10V, ID = 14A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 14A VDS = 30V, VGS = 0V, TJ = 55 ° C Gate Resistance VDS = 5V, ID = 14A QgTotal Gate Charge2 Ciss IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current trr IF = 14A, VGS = 0V nSVDS = 20V, ID @ 14A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 32V, VGS = 0V UNITS Coss VDS = 0V, VGS = ± 20V gfs IF = 14A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS VGS = 4.5V, ID = 10A V REV 1.0 2 2017/1/10

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/10

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/10

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/10

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2017/1/10

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/10

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/10