PK676BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS G. GATE D. DRAIN PDFN 5X6P S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 51A. TA= 70 ° C 20 Power Dissipation TA = 25 ° C 2.6 Continuous Drain Current TA = 25 ° C ID W mJ RqJA PD W1.7 TC = 100 ° CPower Dissipation TJ, Tstg PD ± 20 Pulsed Drain Current1 238 TA = 70 ° C ID Tc = 25 ° C 40V Continuous Drain Current3 Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 2mΩ @VGS = 10V 116A Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 69 UNITS 150 TYPICAL VDS 40 V ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 A V 2.3 ° C / W 116 VGSGate-Source Voltage REV 1.1 1 2018/9/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 1.9 3 1.6 2 96 S 6194 712 474 1.6 Ω VGS =10V 125 VGS =4.5V 70 41 A 1.3 V 38 nS 25 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 51A. LIMITS VGS = 0V, VDS = 20V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 20A VDS = 30V, VGS = 0V, TJ = 55 ° C SYMBOL VDS = 20V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 20A, VGS = 0V nSVDS = 20V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 32V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC V(BR)DSS TEST CONDITIONS IF = 20A, dlF/dt = 100A / μS UNITS Coss Crss VGS = 4.5V, ID = 16A Drain-Source Breakdown Voltage V REV 1.1 2 2018/9/13

N-Channel Enhancement Mode MOSFET REV 1.1 3 2018/9/13

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.1 6 2018/9/13

N-Channel Enhancement Mode MOSFET REV 1.1 7 2018/9/13

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2018/9/13