PK632BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 40A. 4The Power dissipation is based on RqJA t ≦10s value. Junction-to-Ambient2 Steady-State RqJA 48 Junction-to-Case Steady-State TA= 70 ° C 22 Power Dissipation4 TA = 25 ° C 4.6 Continuous Drain Current TA = 25 ° C ID W mJ RqJA PD W2.9 Power Dissipation TJ, Tstg PD t ≦10sJunction-to-Ambient2 Pulsed Drain Current1 TA = 70 ° C TC = 100 ° C ID TC = 25 ° C 30V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 3.3mΩ @VGS = 10V 88A THERMAL RESISTANCE Avalanche Energy L =0.1mH RqJC LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 40 UNITS 150 TYPICAL VDS 30 V ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 VGSGate-Source Voltage A V 2.7 ° C / W ± 20 REV 1.2 1 2016/6/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.5 1.9 2.35 ± 100 nA 3 4 2.1 3.3 62 S 2096 393 229 1.5 Ω VGS =10V 42 VGS =4.5V 22 6.6 46 A 1 V 28 nS 15 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 40A. LIMITSPARAMETER Output Capacitance VGS = 10V , ID = 20A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 20A, VGS = 0V nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC V(BR)DSS TEST CONDITIONS IF = 20A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 16A V REV 1.2 2 2016/6/23

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.2 6 2016/6/23

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 8 2016/6/23