PK630HY

PK630HY UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS CH. 30V Q2 30V Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. Power Dissipation 150 ± 20 PD W PARAMETERS/TEST CONDITIONS 4.9mΩ @VGS = 10V 7.8mΩ @VGS = 10V mJ ID LIMITS Continuous Drain Current UNITSUNITS IDRDS(ON) TA = 25 ° C IAS 64A Avalanche Energy L = 0.1mH EAS TC = 25 ° C TA = 70 ° C 40A SYMBOL Drain-Source Voltage 30 Pulsed Drain Current1 VDS ID IDM ± 20 TC = 100 ° C Continuous Drain Current3 A Gate-Source Voltage V Avalanche Current VGS TC = 100 ° C TC = 25 ° C 9.6 REV 1.0 1 2017/1/3

Dual N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=25A,Q2=25A. 4The Power dissipation is based on RqJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.6 2.3 Q1 1.27 1.36 2.3 Q2 ± 100 Q1 ± 100 Q2 0.5 mA Q1 1 mA Q2 5 mA Q1 10 mA Q2 3.4 5.1 Q1 6.8 11 Q2 2.7 4.9 Q1 5.3 7.8 Q2 70 Q1 66 t ≦10s Junction-to-Ambient2 Steady-State VGS = 0V, ID = 250mA VGS = 0V, ID = 1mA Forward Transconductance1 gfs 2.6 5.2 ° C / W 3.3 VGS = 10V, ID = 11A Gate-Body Leakage Zero Gate Voltage Drain Current IDSS V VDS = 5V, ID = 20A VDS = 5V, ID = 11A S VGS = 10V, ID = 20A UNITS VGS = 4.5V, ID = 11A VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 ° C RqJA RqJC nA Gate Threshold Voltage SYMBOLTHERMAL RESISTANCE Operating Junction & Storage Temperature Range PD RqJA VGS(th) TEST CONDITIONS TA = 70 ° C TEST CONDITIONS TJ, TSTG LIMITSCH. Junction-to-Case Power Dissipation4 W -55 to 150 MAXIMUM TA = 25 ° C 4 STATIC 3.1 PARAMETER SYMBOL mΩDrain-Source On-State Resistance1 RDS(ON) VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage V(BR)DSS IGSS VDS = 0V, VGS = ± 20V VGS = 4.5V, ID = 16A REV 1.0 2 2017/1/3

Dual N-Channel Enhancement Mode MOSFET Q2 2148 Q1 853 Q2 402 Q1 149 Q2 255 Q1 109 Q2 1.6 Q1 0.8 Q2 44 Q1 18 Q2 10.7 Q1 10 Q2 5.4 Q1 2.1 Q2 11 Q1 4.8 Q2 30 Q1 25 Q2 20 Q1 21 Q2 61 Q1 40 Q2 22 Q1 20 Q2 37 Q1 20 Q2 1 Q1 1.2 Q2 21 Q1 13.5 Q2 6.5 Q1 4 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=25A,Q2=25A. Reverse Recovery Charge Qrr IF = 20A, dlF/dt = 100A /ms IF = 11A, dlF/dt = 100A /mS nS nC Forward Voltage1 VSD IF = 20A, VGS = 0V IF = 11A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IS Turn-On Delay Time2 td(on) VDS = 15V,ID @ 20A, VGS=10V, RGEN= 6Ω VDS = 15V ,ID @ 11A, VGS = 10V, RGEN =6Ω nS V Reverse Recovery Time trr tr Turn-Off Delay Time2 td(off) Fall Time2 tf Continuous Current3 VGS=10V Total Gate Charge2 Qg VGS=4.5V A Qgs Gate-Drain Charge2 Qgd VDS = 15V , VGS = 10V, ID = 20A VDS = 15V , VGS = 10V, ID = 11A nC Reverse Transfer Capacitance Crss VGS = 0V, VDS = 15V, f = 1MHz Input Capacitance Rise Time2 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω Ciss Output Capacitance Coss DYNAMICDYNAMIC Gate-Source Charge2 REV 1.0 3 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 6 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/3

Dual N-Channel Enhancement Mode MOSFET ＊散热片形状会因为封装厂框架不同而有所差异。 REV 1.0 8 2017/1/3

Dual N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 9 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 10 2017/1/3

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 11 2017/1/3