PK626HY

PK626HY UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS CH. 30V Q2 30V Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. 99A PARAMETERS/TEST CONDITIONS 2.4mΩ @VGS = 10V 7mΩ @VGS = 10V Power Dissipation 1717 L = 0.1mH EAS UNITSUNITS 120 ± 20 mJ PD W 115 ID IAS TC = 100 ° C 9.6 TC = 25 ° C ID 9.5 IDRDS(ON) LIMITS 43A SYMBOL Drain-Source Voltage Pulsed Drain Current1 VDS VGS TC = 100 ° C TA = 70 ° C Avalanche Energy TC = 25 °C TA = 25 ° C Continuous Drain Current 26.4 Continuous Drain Current3 A Gate-Source Voltage V Avalanche Current IDM ± 20 REV 1.0 1 2017/1/5

Dual N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=29A,Q2=34A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Q2 ± 100 Q1 ± 100 Q2 0.5 mA Q1 1 mA Q2 5 mA Q1 10 mA Q2 2.3 3 Q1 7.4 9.5 Q2 1.9 2.4 Q1 5.6 7 Q2 70 Q1 50 VGS = 0V, ID = 1mA VGS = 0V, ID = 250mA VGS = 4.5V, ID = 11A VGS = 10V, ID = 20A UNITS V nA Forward Transconductance1 gfs VDS = 5V, ID = 20A VDS = 5V, ID = 11A S SYMBOLTHERMAL RESISTANCE Operating Junction & Storage Temperature Range PD MAXIMUM 1.7 2.7 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 ° C RqJA RqJC TEST CONDITIONS VGS(th) TEST CONDITIONS Gate Threshold Voltage Gate-Body Leakage 1.7 -55 to 150 TA = 70 ° C Power Dissipation TA = 25 ° C W TJ, TSTG 1.1 5.2 STATIC LIMITSCH. ° C / W Junction-to-Case Junction-to-Ambient2 VDS = 0V, VGS = ± 20V VGS = 4.5V, ID = 15A 2.9 PARAMETER SYMBOL VGS = 10V, ID = 11A mΩDrain-Source On-State Resistance1 RDS(ON) VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage V(BR)DSS IGSS REV 1.0 2 2017/1/5

Dual N-Channel Enhancement Mode MOSFET Q2 3232 Q1 824 Q2 606 Q1 162 Q2 353 Q1 103 Q2 1.25 Q1 2.3 Q2 63 Q1 18 Q2 34 Q1 10 Q2 8.3 Q1 2 Q2 15.5 Q1 6 Q2 31 Q1 27 Q2 15 Q1 20 Q2 64 Q1 40 Q2 22 Q1 19 Q2 71 Q1 20 Q2 0.6 Q1 1.2 Q2 28.8 Q1 16.5 Q2 12.7 Q1 5.2 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=29A,Q2=34A. Reverse Recovery Charge Qrr IF = 20A, dlF/dt = 100A /ms IF = 11A, dlF/dt = 100A /mS nS nC Forward Voltage1 VSD IF = 1A, VGS = 0V IF = 11A, VGS = 0V V Reverse Recovery Time trr tr Turn-Off Delay Time2 td(off) Fall Time2 tf Continuous Current3 IS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) A Qgs Gate-Drain Charge2 Qgd VDS = 15V , VGS = 10V,ID = 20A VDS = 15V , VGS = 10V,ID = 11A nC Turn-On Delay Time2 td(on) VDS = 15V, ID @ 20A, VGS=10V, RGEN= 6Ω VDS = 15V , ID @ 11A, VGS = 10V, RGEN =6Ω nS Rise Time2 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω VGS=10V Total Gate Charge2 Qg VGS=4.5V Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz DYNAMICDYNAMIC Gate-Source Charge2 REV 1.0 3 2017/1/5

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/5

Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/5

Dual N-Channel Enhancement Mode MOSFET REV 1.0 6 2017/1/5

Dual N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/5

Dual N-Channel Enhancement Mode MOSFET ＊散热片形状会因为封装厂框架不同而有所差异。 REV 1.0 8 2017/1/5

Dual N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 9 2017/1/5

Dual N-Channel Enhancement Mode MOSFET REV 1.0 10 2017/1/5

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 11 2017/1/5