PK626BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air environment with TA =25° C. 3Package limitation current is 35A. A V 1.7 ° C / W 150 Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS 280 TYPICAL VDS 30 V ID IDM SYMBOL LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 56.6 Junction-to-Case RqJC Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH ID TC = 25 ° C 30V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 1.9mΩ @VGS = 10V 150A VGSGate-Source Voltage 160 ± 20 Pulsed Drain Current1 Continuous Drain Current TA = 25 ° C ID TC = 100 ° CPower Dissipation TJ, Tstg PD W mJ RqJA PD WTA = 70 ° C 1.6 TA= 70 ° C 21 Power Dissipation TA = 25 ° C 2.5 REV1.3 1 2016/6/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.35 ± 100 nA 1.8 3.5 1.4 1.9 80 S 3920 584 436 1.2 Ω VGS =10V 77 VGS =4.5V 40 73 A 1 V 29 nS 13 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 35A. STATIC Drain-Source Breakdown Voltage V IF = 20A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 16A V(BR)DSS TEST CONDITIONS VDS = 20V, VGS = 0V, TJ = 55 ° C Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 20A, VGS = 0V nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Output Capacitance VGS = 10V , ID = 20A VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER SYMBOL LIMITS QgTotal Gate Charge2 REV1.3 2 2016/6/23

N-Channel Enhancement Mode MOSFET REV1.3 3 2016/6/23

N-Channel Enhancement Mode MOSFET REV1.3 4 2016/6/23

N-Channel Enhancement Mode MOSFET REV1.3 5 2016/6/23

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV1.3 6 2016/6/23

N-Channel Enhancement Mode MOSFET REV1.3 7 2016/6/23

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV1.3 8 2016/6/23