PK618BA

PK618BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 26A. TA= 70 ° C 12 Power Dissipation TA = 25 ° C 2.5 Continuous Drain Current TA = 25 ° C ID RqJA PD W1.6 TC = 100 ° CPower Dissipation TJ, Tstg PD ± 20 Pulsed Drain Current1 TA = 70 ° C ID Tc = 25 ° C 30V Continuous Drain Current3 Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 5.5mΩ @VGS = 10V 59A Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 31 W mJ UNITS 150 TYPICAL VDS 30 ID IDM SYMBOL LIMITS Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 VGSGate-Source Voltage V A 3.6 ° C / W REV 1.0 1 2014/7/10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.5 1.75 2.35 ± 100 nA 4.5 6.8 3.7 5.5 60 S 1330 257 154 1.6 Ω VGS =10V 28 VGS =4.5V 15 7.1 59 A 1.2 V 22 nS 8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 26A. LIMITS VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 20A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 20A, VGS = 0V nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC TEST CONDITIONS IF = 20A, dlF/dt = 100A / μS UNITS Coss Crss VGS = 4.5V, ID = 15A V V(BR)DSS REV 1.0 2 2014/7/10

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/7/10

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/7/10

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/7/10