PK616BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. TA= 70 ° C 10.5 Power Dissipation TA = 25 ° C 2.2 Continuous Drain Current TA = 25 ° C ID W mJ 12.5 RqJA PD W1.4 TC = 100 ° CPower Dissipation TJ, Tstg PD ± 20 Pulsed Drain Current1 28.5 TA = 70 ° C ID Tc = 25 ° C 30V Continuous Drain Current Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 7mΩ @VGS = 10V 50A Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 24 UNITS 120 31.5 TYPICAL VDS 30 V ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 A V 4 ° C / W VGSGate-Source Voltage REV 1.0 1 2014-2-20

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.35 1.7 3 ± 100 nA 6.3 9.5 4.8 7 60 S 847 163 2.3 Ω VGS =10V 17.5 VGS =4.5V 9.3 2.1 5.4 25.8 A 1.2 V 10.8 nS 2.3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. LIMITS VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 13A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL VDS = 15V, VGS = 10V, ID = 13A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 13A, VGS = 0V nSVDS = 15V, ID @ 13A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 13A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC V(BR)DSS TEST CONDITIONS IF = 13A, dlF/dt = 100A / μS UNITS Coss Crss VGS = 4.5V, ID = 13A Drain-Source Breakdown Voltage V REV 1.0 2 2014-2-20

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014-2-20

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014-2-20

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-2-20