PK615BM6 UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1 limited by maximum junction temperature. Drain-Source Voltage VDS 150 V SYMBOL Pulsed Drain Current1 MAXIMUMTHERMAL RESISTANCE Junction & Storage Temperature Range SYMBOL PD TJ, TSTG VGS TA = 25 ° C RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 2.6Ω @VGS = 10V 0.37A ID 150V Continuous Drain Current TA = 25 ° C RqJA 150 ± 20 V ID IDM TYPICAL 0.53 -55 to 150 0.37 A LIMITS 0.83 Junction-to-Ambient TA = 70 ° C Power Dissipation W UNITS 2.2 0.29 Ver 1.0 1 2012/6/26
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 1 2 3 ± 100 nA 2.2 A 1.4 2.6 Ω 1 S 111 4.8 0.5 3.5 12.6 104 0.37 A 1.5 V 48 nS 50 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Forward Voltage1 VSD IF = 1.3A, VGS = 0V tr Total Gate Charge2 Reverse Recovery Time trr IF = 2A, dIF/dt=100A/mS Qg Qgs Qgd td(on) Continuous Current Reverse Recovery Charge IS Qrr nC nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Drain-Source On-State Resistance1 td(off) tf Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 VDS = 75V ID @ 0.3A, VGS = 10V, RGEN = 6Ω Gate-Source Charge2 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 0.3A Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss VGS = 0V, VDS = 25V, f = 1MHz gfs VDS = 5V, VGS = 10V STATIC LIMITS UNITPARAMETER SYMBOL TEST CONDITIONS VDS = 120V, VGS = 0V On-State Drain Current1 ID(ON) VDS = 100V, VGS = 0V , TJ = 70 ° C VDS = VGS, ID = 250mAGate Threshold Voltage pF Ciss Coss VGS(th) VDS = 5V, ID = 0.3A DYNAMIC V IGSS IDSS mA Drain-Source Breakdown Voltage VGS = 10V, ID = 0.3ARDS(ON) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 0V, VGS = ± 20V Ver 1.0 2 2012/6/26
N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/6/26
N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/6/26
N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/6/26