PK612DZ

PK612DZ UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS CH. 30V Q2 30V Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. Continuous Drain Current3 A Gate-Source Voltage VDS VGS TC = 100 ° C ID IDM ± 20 V TC = 25 ° C 48A SYMBOL Drain-Source Voltage 30 Pulsed Drain Current1 120 Avalanche Current 26 Avalanche Energy 33.8 TA = 25 ° C Continuous Drain Current IDRDS(ON) TC = 100 ° C TC = 25 ° C TA = 70 ° C ID LIMITS IAS mJ PD W 140 1414 L = 0.1mH EAS UNITSUNITS 150 ± 20 95A PARAMETERS/TEST CONDITIONS 1.9mΩ @VGS = 10V 5.5mΩ @VGS = 10V Power Dissipation REV 1.0 1 2015/9/17

Dual N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=35A,Q2=35A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.7 2.3 Q1 1.3 1.7 2.3 Q2 ± 100 Q1 ± 100 Q2 1 Q1 1 Q2 10 Q1 10 Q2 1.8 2.5 Q1 5.2 7.4 Q2 1.4 1.9 Q1 3.9 5.5 Q2 70 Q1 50 VGS = 10V, ID = 11A mΩDrain-Source On-State Resistance1 RDS(ON) VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VGS = 0V, ID = 250mADrain-Source Breakdown Voltage V(BR)DSS IGSS VDS = 0V, VGS = ± 20V VGS = 4.5V, ID = 16A PARAMETER SYMBOL STATIC 3.4 Power Dissipation LIMITSCH. Junction-to-Case Junction-to-Ambient2 TJ, TSTG 1.1 ° C / W TA = 70 ° C TA = 25 ° C Gate-Body Leakage Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 ° C RqJA RqJC TEST CONDITIONS VGS(th) TEST CONDITIONS 1.8 W -55 to 150 Gate Threshold Voltage SYMBOLTHERMAL RESISTANCE Operating Junction & Storage Temperature Range PD VDS = 5V, ID = 11A S MAXIMUM 1.5 2.4 UNITS mA VGS = 4.5V, ID = 11A VGS = 10V, ID = 20A V nA Forward Transconductance1 gfs VDS = 5V, ID = 20A REV 1.0 2 2015/9/17

Dual N-Channel Enhancement Mode MOSFET Q2 2779 Q1 1041 Q2 522 Q1 198 Q2 318 Q1 123 Q2 0.83 Q1 2 Q2 54 Q1 21 Q2 29 Q1 11 Q2 7.1 Q1 2.4 Q2 13.4 Q1 6 Q2 25 Q1 23 Q2 17 Q1 16 Q2 54 Q1 50 Q2 17 Q1 15 Q2 36 Q1 20 Q2 1 Q1 1.2 Q2 21 Q1 12.4 Q2 10 Q1 4 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=35A,Q2=35A. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Gate-Source Charge2 Input Capacitance DYNAMICDYNAMIC Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0V, VDS = 15V, f = 1MHz pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω VGS=10V Total Gate Charge2 Qg VGS=4.5V Ciss Qgs Gate-Drain Charge2 Qgd VDS = 15V , VGS = 10V, ID = 20A VDS = 15V , VGS = 10V, ID = 11A nC Turn-On Delay Time2 td(on) VDS = 15V,ID @ 20A, VGS=10V, RGEN= 6Ω VDS = 15V ,ID @ 11A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Continuous Current3 IS A Forward Voltage1 VSD IF = 20A, VGS = 0V IF = 11A, VGS = 0V V Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 20A, dlF/dt = 100A /ms IF = 11A, dlF/dt = 100A /mS nS nC REV 1.0 3 2015/9/17

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/9/17

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Dual N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 9 2015/9/17

Dual N-Channel Enhancement Mode MOSFET REV 1.0 10 2015/9/17

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 11 2015/9/17