PK610SA

PK610SA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 45A 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. EAS TA= 70 ° C 18 Power Dissipation TA = 25 ° C 2.3 Continuous Drain Current TA = 25 ° C ID RqJA PD W1.5 TC = 25 ° C TC = 100 ° CPower Dissipation TJ, Tstg PD 68.5 TA = 70 ° C ID TC = 25 ° C 30V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 2.8mΩ @VGS = 10V 83A Junction-to-Ambient3 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC LIMITS MAXIMUM Avalanche Current IAS 37 W mJ ± 20 Pulsed Drain Current1 UNITS 150 TYPICAL VDS 30 ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 VGSGate-Source Voltage V A 3.6 ° C / W REV 1.1 1 2015/5/25

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.6 2.3 ± 100 nA 0.5 2.7 3.5 2 2.8 65 S 2030 386 230 1.5 Ω 5.5 34 A 1 V 15 nS 4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 45A. SYMBOL LIMITSTEST CONDITIONS Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 20A VDS = 20V, VGS = 0V, TJ = 55 ° C VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 1mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 20A, VGS = 0V nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC VGS = 4.5V, ID = 16A V(BR)DSS IF = 20A, dlF/dt = 100A / mS UNITS Coss Crss Qg V REV 1.1 2 2015/5/25

N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/5/25

N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/5/25

N-Channel Enhancement Mode MOSFET REV 1.1 5 2015/5/25