PK610DZ

PK610DZ UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS CH. 30V Q2 30V Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. Gate-Source Voltage V Avalanche Current VGS TC = 100 ° C TC = 25 ° C 9.4 TC = 100 ° C Continuous Drain Current3 A 43A SYMBOL Drain-Source Voltage 30 Pulsed Drain Current1 100 VDS ID IDM ± 20 TC = 25 ° C TA = 70 ° C L = 0.1mH EAS 9.8 IDRDS(ON) TA = 25 ° C IAS 127A PARAMETERS/TEST CONDITIONS 1.2mΩ @VGS = 10V 6.5mΩ @VGS = 10V mJ ID LIMITS Continuous Drain Current UNITS Avalanche Energy UNITS 160 127 ± 20 PD W 235 68.6 Power Dissipation REV 1.0 1 2017/1/3

Dual N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=35A,Q2=35A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.8 2.3 Q1 1.3 1.6 2.3 Q2 ± 100 Q1 ± 100 Q2 1 Q1 1 Q2 10 Q1 10 Q2 1.2 1.6 Q1 6 9.5 Q2 0.85 1.2 Q1 4.3 6.5 Q2 68 Q1 50 2.5 1.7 1.6Power Dissipation TA = 25 ° C PD TA = 70 ° C VGS = 10V, ID = 11A mΩDrain-Source On-State Resistance1 RDS(ON) VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage V(BR)DSS IGSS 1.1 VDS = 0V, VGS = ± 20V VGS = 4.5V, ID = 16A PARAMETER SYMBOL STATIC 3.2 -55 to 150 MAXIMUM RqJC W LIMITSCH. Junction-to-Case 5.1 ° C / W TEST CONDITIONS TJ, TSTG nA Gate Threshold Voltage SYMBOLTHERMAL RESISTANCE Operating Junction & Storage Temperature Range VGS(th) TEST CONDITIONS Gate-Body Leakage VDS = 5V, ID = 20A VDS = 5V, ID = 11A S VGS = 10V, ID = 20A UNITS VGS = 4.5V, ID = 11A VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 ° C RqJA Zero Gate Voltage Drain Current IDSS Forward Transconductance1 gfs mA Junction-to-Ambient2 VGS = 0V, ID = 250mA V REV 1.0 2 2017/1/3

Dual N-Channel Enhancement Mode MOSFET Q2 4056 Q1 888 Q2 782 Q1 171 Q2 456 Q1 99 Q2 1 Q1 1.1 Q2 81 Q1 17.3 Q2 43 Q1 9.3 Q2 12 Q1 2.5 Q2 19 Q1 4.7 Q2 30 Q1 21 Q2 19 Q1 15 Q2 61 Q1 46 Q2 21 Q1 15 Q2 39 Q1 20 Q2 1 Q1 1.2 Q2 28 Q1 8.2 Q2 15 Q1 1.3 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=35A,Q2=35A. Gate-Source Charge2 Ciss Output Capacitance Coss DYNAMICDYNAMIC Rise Time2 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω VGS=4.5V Qgs Reverse Transfer Capacitance Crss VGS = 0V, VDS = 15V, f = 1MHz Input Capacitance VDS = 15V , VGS = 10V, ID = 20A VDS = 15V , VGS = 10V, ID = 11A nC Reverse Recovery Time trr tr Turn-Off Delay Time2 td(off) VGS=10V Total Gate Charge2 Qg V A Turn-On Delay Time2 td(on) VDS = 15V,ID @ 20A, VGS=10V, RGEN= 6Ω VDS = 15V ,ID @ 11A, VGS = 10V, RGEN =6Ω nS Gate-Drain Charge2 Qgd SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Fall Time2 tf Continuous Current3 IS Reverse Recovery Charge Qrr IF = 20A, dlF/dt = 100A /ms IF = 11A, dlF/dt = 100A /mS nS nC Forward Voltage1 VSD IF = 20A, VGS = 0V IF = 11A, VGS = 0V REV 1.0 3 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/3

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Dual N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 9 2017/1/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 10 2017/1/3

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 11 2017/1/3