PK608DY UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V 30V 1 : G1 8 : G2 PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. TC = 25 ° C TC = 100° C Avalanche Energy Avalanche Current IAS A UNITS ± 20 LIMITS V 5.5mΩ @VGS =10V ± 20Gate-Source Voltage 50A7mΩ @VGS =10V RDS(ON) PARAMETERS/TEST CONDITIONS Continuous Drain Current3 ID Channel SYMBOL 58A VGS Drain-Source Voltage VDS 2,3,4 : D1 5,6,7 : S2 PD 104 L = 0.1mH TC = 25 ° C Pulsed Drain Current1 EAS Power Dissipation mJ W TC = 100 ° C 9 : S1/D2 Continuous Drain Current TA = 25 ° C TA = 70 ° C ID ID IDM REV 1.0 1 2014/9/27

N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS RqJA Q1 RqJA Q2 RqJC Q1 RqJC Q2 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=25A,Q2=34A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q1 30 Q2 30 Q1 1.3 1.6 2.3 Q2 1.3 1.7 2.3 Q1 ± 100 Q2 ± 100 Q1 1 Q2 1 Q1 10 Q2 10 Q1 6.3 9.5 Q2 4.3 8 Q1 4.8 7 Q2 3.3 5.5 Q1 67 Q2 80 VDS = 5V, ID = 12A VGS = 0V, ID = 250mA VGS(th) VDS = 24V, VGS = 0V VDS =20V, VGS = 0V, TJ = 55 ° C VDS = 5V, ID = 15A VDS = 0V, VGS = ± 20VIGSS RDS(ON) VGS =4.5V, ID = 15A VGS = 10V, ID = 12A VGS = 10V, ID = 15A Gate-Body Leakage IDSS Zero Gate Voltage Drain Current Gate Threshold Voltage LIMITS 52Junction-to-Ambient2 VDS = VGS, ID = 250mA STATIC THERMAL RESISTANCE CH.SYMBOL Drain-Source On-State Resistance1 TEST CONDITIONS Forward Transconductance1 nA mA gfs mΩ S SYMBOL TYPICAL UNITSPARAMETER Drain-Source Breakdown Voltage V(BR)DSS MAXIMUM 1.5 W Operating Junction & Storage Temperature Range Tj, Tstg VGS = 4.5V, ID = 12A V Power Dissipation TA = 25 ° C TA = 70 ° C PD 2.1 2.4 1.3 -55 to 150 °C Junction-to-Case 4.4 3.5 ° C / W REV 1.0 2 2014/9/27

N-Channel Enhancement Mode MOSFET Q1 852 Q2 1395 Q1 162 Q2 275 Q1 103 Q2 167 Q1 2.1 Q2 1.3 Q1 18.6 Q2 29.6 Q1 10 Q2 15.7 Q1 2 Q2 4.1 Q1 5.4 Q2 8.5 Q1 18 Q2 27 Q1 13 Q2 16 Q1 33 Q2 66 Q1 15 Q2 23 Q1 23 Q2 29 Q1 1.2 Q2 1.2 Q1 15.8 Q2 21.3 Q1 5.1 Q2 8.8 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=25A,Q2=34A. IF = 12A, VGS = 0V Qg(VGS = 4.5V) td(off) Continuous Current3 VDS = 15V, VGS = 10V, ID = 12V, VDS = 15V , VGS = 10V, ID = 15A VGS = 0V, VDS = 15V, f = 1MHz Reverse Transfer Capacitance Crss Ciss nS Turn-Off Delay Time2 Fall Time2 Forward Voltage1 Gate Resistance Rg A Qgd Input Capacitance V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Gate-Source Charge2 VGS = 0V, VDS = 0V, f = 1MHz Ω Qgs pF Qrr tf Coss VDS = 15V,ID @ 12A, VGS = 10V,RGEN = 6Ω VDS = 15V ,ID @ 15A, VGS = 10V, RGEN =6Ω nC nC Reverse Recovery Time Reverse Recovery Charge IS tr Output Capacitance Turn-On Delay Time2 td(on) Total Gate Charge2 DYNAMIC trr Rise Time2 Gate-Drain Charge2 VSD IF = 12A, dlF/dt = 100A / mS IF = 15A, dlF/dt = 100A /mS nS IF = 15A, VGS = 0V Qg(VGS = 10V) REV 1.0 3 2014/9/27

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/9/27

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/27

N-Channel Enhancement Mode MOSFET REV 1.0 6 2014/9/27

N-Channel Enhancement Mode MOSFET REV 1.0 7 2014/9/27

N-Channel Enhancement Mode MOSFET REV 1.0 8 2014/9/27