PK608BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 51A. 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. TA= 70 ° C 15.6 Power Dissipation TA = 25 ° C 2.4 W mJ RqJA PD WTA = 70 ° C 1.5 Continuous Drain Current TA = 25 ° C ID TC = 100 ° CPower Dissipation TJ, Tstg PD Gate-Source Voltage 120 ± 20 Pulsed Drain Current1 ID Tc = 25 ° C 40V Continuous Drain Current2 Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 3.5mΩ @VGS = 10V 87A Junction-to-Ambient3 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 49 UNITS 150 TYPICAL VDS 40 V ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 50.2 A V 2.5 ° C / W VGS REV 1.1 1 2016/7/14

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 3 4.6 2.6 3.5 136 S 3884 441 329 1.1 Ω VGS =10V 77 VGS =4.5V 40 38 A 1.3 V 25 nS 19 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. SYMBOL LIMITS Input Capacitance VGS = 0V, VDS = 20V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 20A VDS = 20V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 20A, VGS = 0V nSVDS = 20V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 40V, VGS = 0V Qgd pF IDSS VDS = 32V, VGS = 0V, TJ = 55 ° C Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 V(BR)DSS TEST CONDITIONS IF = 20A, dlF/dt = 100A / μS UNITS Coss Crss VGS = 4.5V, ID = 15A STATIC Drain-Source Breakdown Voltage V REV 1.1 2 2016/7/14

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.1 6 2016/7/14

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2016/7/14