PK601CA

PK601CA UNIKC | Alldatasheet

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N & P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS CH. -30V Q2 30V Q1 100% UIS Tested PDFN 5*6P 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. Continuous Drain Current3 A Gate-Source Voltage V Avalanche Current IDM ± 20 TC = 25 ° C TA = 25 ° C Continuous Drain Current 23A SYMBOL Drain-Source Voltage Pulsed Drain Current1 VDS VGS TC = 100 ° C TA = 70 ° C Avalanche Energy 7.3 -6.3 6.9 8.6 IDRDS(ON) TC = 100 ° C TC = 25 ° C ID -30 LIMITS -7.8 8.6 ID IAS mJ PD W -19 1010 L = 0.1mH EAS UNITSUNITS -45 -22 ± 20 -22A -14 PARAMETERS/TEST CONDITIONS 28mΩ @VGS = -10V 22mΩ @VGS = 10V Power Dissipation REV 1.0 1 2017/1/4

N & P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS 1Pulse width limited by maximum junction temperature . 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 3Package limitation current :Q1=10A,Q2=-10A ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 -30 Q1 30 Q2 -1 -1.5 -2.5 Q1 1 1.6 2.5 Q2 ± 100 Q1 ± 100 Q2 -1 Q1 1 Q2 -10 Q1 10 Q2 30 45 Q1 18 32 Q2 20 28 Q1 14 22 Q2 18 Q1 27 VDS = 0V, VGS = ± 20V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V VDS = -20V VGS = 0V ,TJ = 55 ° C VDS = 20V VGS = 0V ,TJ = 55 ° C VGS = 0V, ID = -250mA VGS = 0V, ID = 250mA VDS = VGS, ID = -250mA VDS = VGS, ID = 250mA VGS = 10V, ID = 7A mΩDrain-Source On-State Resistance1 RDS(ON) Drain-Source Breakdown Voltage V(BR)DSS IGSS PARAMETER SYMBOL Junction-to-Ambient2 Junction-to-Ambient2 VGS = -4.5V, ID = -5A t ≦10s Steady-State t ≦10s Steady-State RqJA RqJA Junction-to-Case STATIC LIMITSCH. TJ, TSTG 5.5 ° C / W TA = 70 ° C Power Dissipation TA = 25 ° C Gate-Body Leakage Zero Gate Voltage Drain Current IDSS RqJC TEST CONDITIONS VGS(th) TEST CONDITIONS VDS = 0V, VGS = ± 20V 3 W -55 to 150 Gate Threshold Voltage SYMBOLTHERMAL RESISTANCE Operating Junction & Storage Temperature Range PD MAXIMUM UNITS mA V nA Forward Transconductance1 gfs VDS = -5V, ID = -6A VDS = 5V, ID = 7A S VGS = 4.5V, ID = 6A VGS = -10V, ID = -6A REV 1.0 2 2017/1/4

N & P-Channel Enhancement Mode MOSFET Q2 929 Q1 341 Q2 145 Q1 84 Q2 122 Q1 48 Q2 12 Q1 3 Q2 20.8 Q1 7.6 Q2 10.8 Q1 4.3 Q2 2 Q1 1 Q2 5 Q1 2 Q2 15 Q1 15 Q2 30 Q1 30 Q2 50 Q1 20 Q2 41 Q1 13 Q2 -25 Q1 20 Q2 -1 Q1 1.1 Q2 12.6 Q1 7.9 Q2 4.2 Q1 1.2 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current :Q1=10A,Q2=-10A Gate-Source Charge2 DYNAMICDYNAMIC VGS = 0V, VDS = -15V, f = 1MHz VGS = 0V, VDS = 15V, f = 1MHz VGS=4.5V Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance nS Rise Time2 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Ω VGS=10V Total Gate Charge2 Qg A Qgs Gate-Drain Charge2 Qgd VDS = -15V, VGS = -10V,ID = -6A VDS = 15V, VGS = 10V,ID = 7A nC Turn-On Delay Time2 td(on) VDS = -15V,ID @ -6A, VGS= -10V, RGEN= 6Ω VDS = 15V ,ID @ 7A, VGS = 10V, RGEN =6Ω Reverse Recovery Time trr tr Turn-Off Delay Time2 td(off) Fall Time2 tf Continuous Current3 IS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Reverse Recovery Charge Qrr IF = -6A, dlF/dt = 100A /ms IF = 7A, dlF/dt = 100A /mS nS nC Forward Voltage1 VSD IF = -6A, VGS = 0V IF = 7A, VGS = 0V V REV 1.0 3 2017/1/4

N & P-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/4

N & P-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/4

N & P-Channel Enhancement Mode MOSFET REV 1.0 6 2017/1/4

N & P-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/4

N & P-Channel Enhancement Mode MOSFET ＊散热片形状会因为封装厂框架不同而有所差异。 REV 1.0 8 2017/1/4

N & P-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 9 2017/1/4

N & P-Channel Enhancement Mode MOSFET REV 1.0 10 2017/1/4

N & P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 11 2017/1/4