PK600BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 20A. 10.7 TA= 70 ° C 8.6 Power Dissipation TA = 25 ° C 2 Continuous Drain Current TA = 25 ° C ID W mJ RqJA PD W1.3 Power Dissipation TJ, Tstg PD Pulsed Drain Current1 16.2 TA = 70 ° C TC = 100 ° C ID TC = 25 ° C 30V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 9.5mΩ @VGS = 10V 40A Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 18 UNITS 100 TYPICAL VDS 30 V ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 VGSGate-Source Voltage A V 4.5 ° C / W 27.8 ± 20 REV 1.1 1 2015/7/2

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 9.7 13.5 7.4 9.5 62 S 608 112 2.8 Ω VGS =10V 14 VGS =4.5V 7.3 3.7 25 A 1.1 V 11.7 nS 3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 20A. LIMITSPARAMETER Output Capacitance VGS = 10V , ID = 9.5A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL VDS = 15V, VGS = 10V, ID = 9.5A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 9.5A, VGS = 0V nSVDS = 15V, ID @ 9.5A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 9.5A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC V(BR)DSS TEST CONDITIONS IF = 9.5A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 9A V REV 1.1 2 2015/7/2

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.1 6 2015/7/2

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/7/2