PK5G6EA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 4Package limitation current is 51A. Steady-State Steady-StateJunction-to-Case RqJA 51 VGSGate-Source Voltage A V ° C / W ± 12 Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS 120 TYPICAL VDS 20 V ID IDM SYMBOL LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 51 THERMAL RESISTANCE Avalanche Energy L = 0.1mH ID TC = 25 ° C 20V Continuous Drain Current4 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 2.4mΩ @VGS = 10V 87A TA = 70 ° C TC = 100 ° C t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 RqJC Pulsed Drain Current1 W mJ 12.5 RqJA PD W2.6 TJ, Tstg PD TA= 70 ° C 25 130 Power Dissipation3 TA = 25 ° C 4 Continuous Drain Current TA = 25 ° C ID Power Dissipation REV 1.0 1 2015/10/15

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.7 0.8 1.3 ± 30 mA 1.7 2.4 2 2.8 2.7 3.9 78 S 3727 659 541 1.2 Ω VGS =10V 88 VGS =4.5V 44 3.6 25 A 1.2 V 33 nS 18 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. V IF = 15A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 10V, ID = 15A V(BR)DSS TEST CONDITIONS gfsForward Transconductance1 STATIC LIMITS mΩ nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC VDS = 16V, VGS = 0V Qgd pF IDSS VDS = 5V, ID = 15A QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 15A, VGS = 0V nSVDS = 10V, ID @ 15A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Rg VDS = 10V, VGS = 10V, ID = 15A VDS = 0V, VGS = ± 10V VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 VGS = 0V, VDS = 10V, f = 1MHz Ciss PARAMETER Output Capacitance VGS = 4.5V , ID = 10A VDS = 10V, VGS = 0V, TJ = 55 ° C SYMBOL Drain-Source On-State Resistance1 RDS(ON) VGS = 2.5V , ID = 10A Input Capacitance Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA REV 1.0 2 2015/10/15

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2015/10/15

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/10/15